JFFM20N60C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: JFFM20N60C  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 130 nS

Cossⓘ - Capacitancia de salida: 1270 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm

Encapsulados: TO220F

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JFFM20N60C datasheet

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JFFM20N60C

JFFM20N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency

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JFFM20N60C

JFFM20N50C JFPC20N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 20A, 500V, RDS(on)typ. = 0.21 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

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JFFM20N60C

JFFM24N50C JFPC24N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 24A, 500V, RDS(on)typ. = 0.19 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

Otros transistores... JFAM7N90C, JFFC10N65D, JFFC13N65D, JFFC20N65C, JFFC7N65E, JFFC8N65C, JFFM13N50E, JFFM13N65D, BS170, JFFM3N120E, JFFM3N150C, JFFM7N90C, JFHM20N60C, JFHM20N60E, JFHM30N50P, JFHM50N50C, JFHM9N150E