JFPC11N50C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JFPC11N50C 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 186 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 23 nS
Cossⓘ - Capacitancia de salida: 136 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Encapsulados: TO220
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JFPC11N50C datasheet
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jfpc13n60ci.pdf
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JFPC12N60C JFFM12N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 12A, 600V, RDS(on)typ. = 0.52 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performan
Otros transistores... JFFM10N60C, JFPC10N60CI, JFPC10N65C, JFFC10N65C, JFPC10N65CI, JFPC10N65D, JFPC10N80C, JFFM10N80C, P60NF06, JFFM11N50C, JFPC12N60C, JFFM12N60C, JFPC12N65C, JFPC12N65D, JFPC13N50C, JFFM13N50C, JFPC13N60CI
