STP4410 Todos los transistores

 

STP4410 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STP4410
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 75 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 75 A

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 58 nC
   Conductancia de drenaje-sustrato (Cd): 515 pF
   Resistencia entre drenaje y fuente RDS(on): 0.009 Ohm
   Paquete / Cubierta: TO220

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STP4410 Datasheet (PDF)

 ..1. Size:189K  samhop
stb4410 stp4410.pdf

STP4410
STP4410

STB4410GreenProductSTP4410aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for extremely low RDS(ON).VDSS ID RDS(ON) (m) TypHigh power and current handling capability.100V 75A 7.0 @ VGS=10VTO-220 & TO-263 package.DGSTB SERIESSTP SERIESTO-263(DD-PAK)TO-

 9.1. Size:258K  samhop
stb440s stp440s.pdf

STP4410
STP4410

GreenProductSTB/P440SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for extremely low RDS(ON).RDS(ON) (m) MaxVDSS IDHigh power and current handling capability.8 @ VGS=10VTO-220 & TO-263 package.40V 65A11.5 @ VGS=4.5VS TB S E R IE S S TP S E R IE STO-263

 9.2. Size:381K  semtron
stp4435.pdf

STP4410
STP4410

STP4435 -30V P-Channel Enhancement Mode MOSFETDESCRIPTIONFEATUREThe STP4435 is the P-Channel logic enhancement -30V/-10.0A, RDS(ON) =15m(typ)@VGS =-10V mode power field effect transistor is produced using -30V/-6.0A, RDS(ON) =25m(typ)@VGS =-4.5V high cell density. advanced trench technology to provide excellent RDS(ON). Super high density cell design

 9.3. Size:549K  stansontech
stp4435a.pdf

STP4410
STP4410

STP4435A P Channel Enhancement Mode MOSFET -10A DESCRIPTION STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backlight, note

 9.4. Size:821K  stansontech
stp4407a.pdf

STP4410
STP4410

STP4407A P Channel Enhancement Mode MOSFET - 10A DESCRIPTION The STP4407A is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone an

 9.5. Size:579K  stansontech
stp4407.pdf

STP4410
STP4410

STP4407 P Channel Enhancement Mode MOSFET - 10A DESCRIPTION The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and no

 9.6. Size:637K  stansontech
stp4441.pdf

STP4410
STP4410

STP4441 P Channel Enhancement Mode MOSFET -10A SCRIPTION STP4441 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane t

 9.7. Size:253K  stansontech
stp4403.pdf

STP4410
STP4410

STP4403 P Channel Enhancement Mode MOSFET - 10.0A DESCRIPTION STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as cellular phone and n

 9.8. Size:592K  stansontech
stp4435.pdf

STP4410
STP4410

STP4435 P Channel Enhancement Mode MOSFET -10A DESCRIPTION STP4435 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backlight, notebo

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