JFPC12N65C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JFPC12N65C 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 169 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 23 nS
Cossⓘ - Capacitancia de salida: 160 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.7 Ohm
Encapsulados: TO220
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JFPC12N65C datasheet
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jfpc12n65c.pdf 
JFPC12N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
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jfpc12n65d.pdf
JFPC12N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
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jfpc12n60c jffm12n60c.pdf
JFPC12N60C JFFM12N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 12A, 600V, RDS(on)typ. = 0.52 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performan
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JFFM18N50C JFPC18N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 500V, RDS(on)typ. = 0.24 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf
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jfpc13n65ci.pdf
JFPC13N65CI 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 650V, RDS(on)typ. = 0.71 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs
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jfpc10n65d.pdf
JFPC10N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
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jfpc18n60ci.pdf
JFPC18N60CI 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 600V, RDS(on)typ. = 0.52 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs
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JFPC10N65C JFFC10N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 10A, 650V, RDS(on)typ. = 0.78 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc
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jfpc18n60c jffm18n60c.pdf
JFFM18N60C JFPC18N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 600V, RDS(on)typ. = 0.42 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf
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jfpc18n65c jffc18n65c.pdf
JFFC18N65C JFPC18N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 650V, RDS(on)typ. = 0.45 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf
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JFPC10N80C JFFM10N80C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURES LOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER
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jfpc13n65c jffc13n65c.pdf
JFPC13N65C JFFC13N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 650V, RDS(on)typ. = 0.55 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performan
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jfpc13n60ci.pdf
JFPC13N60CI 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 600V, RDS(on)typ. = 0.65 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs
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jfpc10n60ci.pdf
JFPC10N60CI 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 10A, 600V, RDS(on)typ. = 0.8 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withst
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jfpc18n65ci.pdf
JFPC18N65CI 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A , 650V, RDS(on)typ. = 0.60 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and wit
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jfpc13n50c jffm13n50c.pdf
JFPC13N50C JFFM13N50C 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 13A, 500V, RDS(on)typ. = 380m @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc
Otros transistores... JFPC10N65CI, JFPC10N65D, JFPC10N80C, JFFM10N80C, JFPC11N50C, JFFM11N50C, JFPC12N60C, JFFM12N60C, STP65NF06, JFPC12N65D, JFPC13N50C, JFFM13N50C, JFPC13N60CI, JFPC13N65C, JFFC13N65C, JFPC13N65CI, JFPC16N50C
