JFPC18N60CI Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: JFPC18N60CI  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 220 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 170 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm

Encapsulados: TO220

  📄📄 Copiar 

 Búsqueda de reemplazo de JFPC18N60CI MOSFET

- Selecciónⓘ de transistores por parámetros

 

JFPC18N60CI datasheet

 ..1. Size:503K  jiaensemi
jfpc18n60ci.pdf pdf_icon

JFPC18N60CI

JFPC18N60CI 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 600V, RDS(on)typ. = 0.52 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and withs

 4.1. Size:862K  jiaensemi
jfpc18n60c jffm18n60c.pdf pdf_icon

JFPC18N60CI

JFFM18N60C JFPC18N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 600V, RDS(on)typ. = 0.42 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

 6.1. Size:861K  jiaensemi
jfpc18n65c jffc18n65c.pdf pdf_icon

JFPC18N60CI

JFFC18N65C JFPC18N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 650V, RDS(on)typ. = 0.45 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

 6.2. Size:488K  jiaensemi
jfpc18n65ci.pdf pdf_icon

JFPC18N60CI

JFPC18N65CI 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A , 650V, RDS(on)typ. = 0.60 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and wit

Otros transistores... JFFC13N65C, JFPC13N65CI, JFPC16N50C, JFFM16N50C, JFPC18N50C, JFFM18N50C, JFPC18N60C, JFFM18N60C, AOD4184A, JFPC18N65C, JFFC18N65C, JFPC18N65CI, JFPC20N50C, JFFM20N50C, JFPC20N60C, JFPC20N65C, JFPC24N50C