JFFM12N80C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: JFFM12N80C  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 80 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm

Encapsulados: TO220F

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JFFM12N80C datasheet

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JFPC10N60C JFFM10N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 10A, 600V, RDS(on)typ. = 0.68 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performanc

MOSTRAR MÁS

Otros transistores... JFPC18N65CI, JFPC20N50C, JFFM20N50C, JFPC20N60C, JFPC20N65C, JFPC24N50C, JFFM24N50C, JFPC2N80C, IRF540N, JFPC5N60C, JFFM5N60C, JFPC5N65C, JFFC5N65C, JFPC5N80C, JFFM5N80C, JFPC5N90C, JFFM5N90C