JFPC5N90C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: JFPC5N90C  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 106 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 56 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3.2 Ohm

Encapsulados: TO220

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JFPC5N90C datasheet

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JFPC5N90C

JFPC5N90C JFFM5N90C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURES LOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUP

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JFPC5N90C

JFPC5N80C JFFM5N80C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURES LOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUP

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JFPC5N90C

JFPC5N65C JFFC5N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 4.5A , 650V, RDS(on)typ. = 2.3 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance

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JFPC5N90C

JFPC5N60C JFFM5N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 4.5A , 600V, RDS(on)typ. = 2.0 @VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance

MOSTRAR MÁS

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