JFPC8N65D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: JFPC8N65D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 145 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 32 nC
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 125 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.15 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de JFPC8N65D MOSFET
JFPC8N65D Datasheet (PDF)
jfpc8n65d.pdf

JFPC8N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency s
jfpc8n65c.pdf

JFPC8N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency s
jfpc8n60c jffm8n60c.pdf

JFPC8N60C JFFM8N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 8A, 600V, RDS(on)typ. = 0.90@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance,
jfpc8n80c jffm8n80c.pdf

JFPC8N80C JFFM8N80C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURESLOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SU
Otros transistores... JFPC7N60C , JFFM7N60C , JFPC7N65C , JFFC7N65C , JFPC7N90C , JFPC8N60C , JFFM8N60C , JFPC8N65C , IRF9540 , JFPC8N80C , JFFM8N80C , JFPC9N50C , JFFM9N50C , JFPC9N90C , JFFM9N90C , JFQM3N120E , JFQM3N150C .
History: SMN03T80F | NCEP1212AS | KMB5D5NP30Q
History: SMN03T80F | NCEP1212AS | KMB5D5NP30Q



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMPL1025AK | JMPL1025AE | JMPL0648PKQ | JMPL0648AU | JMPL0648AK | JMPL0648AG | JMPL0625AP | JMPL0622AK | JMSL0302PU | JMSL0302PG2 | JMSL0302DG | JMSL0302BU | JMSL0302AK | JMSL0301TG | JMSL0301AG | JMSH2010PTL
Popular searches
oc84 | c6090 | ksa1015yta | 2n4240 | 2n5210 transistor | toshiba 2sc2290 | pk6d0ba mosfet | 2sd726