SRC60R037B
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRC60R037B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 520
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 600
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30
V
|Id|ⓘ - Corriente continua de drenaje: 76
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5
V
Qgⓘ - Carga de la puerta: 182
nC
trⓘ - Tiempo de subida: 6.6
nS
Cossⓘ - Capacitancia
de salida: 281.4
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.037
Ohm
Paquete / Cubierta:
TO247
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SRC60R037B
Datasheet (PDF)
..1. Size:1180K sanrise-tech
src60r037b.pdf 
Datasheet37m, 600V, Super Junction N-Channel Power MOSFET SRC60R037BGeneral Description SymbolThe Sanrise SRC60R037B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an
6.1. Size:1606K sanrise-tech
src60r030fbs.pdf
Datasheet30m, 600V, Super Junction N-Channel Power MOSFET SRC60R030FBSGeneral DescriptionSymbolThe Sanrise SRC60R030FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensi
6.2. Size:696K sanrise-tech
src60r030bs.pdf
Datasheet 30m, 600V, Super Junction N-Channel Power MOSFET SRC60R030BS General Description Symbol The Sanrise SRC60R030BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
7.1. Size:1038K 1
src60r078b.pdf
Datasheet 78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078B General Description Symbol The Sanrise SRC60R078B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
7.2. Size:643K 1
src60r090b.pdf
Datasheet 90m, 600V, Super Junction N-Channel Power MOSFET SRC60R090B General Description Symbol The Sanrise SRC60R090B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
7.3. Size:619K sanrise-tech
src60r075bs.pdf
Preliminary Datasheet75m, 600V, Super Junction N-Channel Power MOSFET SRC60R075BSGeneral Description SymbolThe Sanrise SRC60R075BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior pow
7.4. Size:1266K sanrise-tech
src60r064s.pdf
Preliminary Datasheet64m, 600V, Super Junction N-Channel Power MOSFET SRC60R064SGeneral Description SymbolThe Sanrise SRC60R064S is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior power
7.5. Size:1038K sanrise-tech
src60r078b.pdf
Datasheet 78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078B General Description Symbol The Sanrise SRC60R078B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
7.6. Size:1146K sanrise-tech
src60r075bsd88.pdf
Datasheet75m, 600V, Super Junction N-Channel Power MOSFET SRC60R075BSGeneral Description SymbolThe Sanrise SRC60R075BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
7.7. Size:1755K sanrise-tech
src60r068bs.pdf
Datasheet68m, 600V, Super Junction N-Channel Power MOSFET SRC60R068BSGeneral Description SymbolThe Sanrise SRC60R068BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
7.8. Size:1572K sanrise-tech
src60r075fbs.pdf
Datasheet75m, 600V, Super Junction N-Channel Power MOSFET SRC60R075FBSGeneral Description SymbolThe Sanrise SRC60R075FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensit
7.9. Size:1103K sanrise-tech
src60r068bstl.pdf
Datasheet68m, 600V, Super Junction N-Channel Power MOSFET SRC60R068BSGeneral Description SymbolThe Sanrise SRC60R068BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
7.10. Size:1422K sanrise-tech
src60r017fb.pdf
Datasheet17m, 600V, Super Junction N-Channel Power MOSFET SRC60R017FBGeneral DescriptionSymbolThe Sanrise SRC60R017FB is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
7.11. Size:909K sanrise-tech
src60r045fb.pdf
Datasheet 45m 600V, Super Junction N-Channel Power MOSFET SRC60R045FB General Description Symbol The Sanrise SRC60R045FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
7.12. Size:1771K sanrise-tech
src60r090bs.pdf
Datasheet90m, 600V, Super Junction N-Channel Power MOSFET SRC60R090BSGeneral Description SymbolThe Sanrise SRC60R090BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
7.13. Size:1172K sanrise-tech
src60r022fbst4g.pdf
Datasheet22m, 600V, Super Junction N-Channel Power MOSFET SRC60R022FBSGeneral Description SymbolThe Sanrise SRC60R022FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensit
7.14. Size:1263K sanrise-tech
src60r022fbs.pdf
Datasheet22m, 600V, Super Junction N-Channel Power MOSFET SRC60R022FBSGeneral Description SymbolThe Sanrise SRC60R022FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensit
7.15. Size:1904K sanrise-tech
src60r029fbs.pdf
Datasheet29m, 600V, Super Junction N-Channel Power MOSFET SRC60R029FBSGeneral Description SymbolThe Sanrise SRC60R029FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensit
7.16. Size:1326K sanrise-tech
src60r017fbt4g.pdf
Datasheet17m, 600V, Super Junction N-Channel Power MOSFET SRC60R017FBGeneral Description SymbolThe Sanrise SRC60R017FB is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
7.17. Size:1771K sanrise-tech
src60r078bs.pdf
Datasheet78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078BSGeneral Description SymbolThe Sanrise SRC60R078BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
Otros transistores... S80N18RP
, SRC60R017FB
, SRC60R017FBT4G
, SRC60R022FBS
, SRC60R022FBST4G
, SRC60R029FBS
, SRC60R030BS
, SRC60R030FBS
, IRLB4132
, SRC60R045FB
, SRC60R064S
, SRC60R068BS
, SRC60R068BSTL
, SRC60R075BS
, SRC60R075BSD88
, SRC60R075FBS
, SRC60R078B
.
History: FDD3672_F085
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