SRC60R075BSD88 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRC60R075BSD88
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 357 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 48 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 2800 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
Encapsulados: PDFN8X8-4
Búsqueda de reemplazo de SRC60R075BSD88 MOSFET
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SRC60R075BSD88 datasheet
src60r075bsd88.pdf
Datasheet 75m , 600V, Super Junction N-Channel Power MOSFET SRC60R075BS General Description Symbol The Sanrise SRC60R075BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density
src60r075bs.pdf
Preliminary Datasheet 75m , 600V, Super Junction N-Channel Power MOSFET SRC60R075BS General Description Symbol The Sanrise SRC60R075BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior pow
src60r075fbs.pdf
Datasheet 75m , 600V, Super Junction N-Channel Power MOSFET SRC60R075FBS General Description Symbol The Sanrise SRC60R075FBS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power densit
src60r078b.pdf
Datasheet 78m , 600V, Super Junction N-Channel Power MOSFET SRC60R078B General Description Symbol The Sanrise SRC60R078B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
Otros transistores... SRC60R030BS , SRC60R030FBS , SRC60R037B , SRC60R045FB , SRC60R064S , SRC60R068BS , SRC60R068BSTL , SRC60R075BS , AO4407 , SRC60R075FBS , SRC60R078B , SRC60R078BS , SRC60R090BS , SRC60R100B , SRC60R100BS , SRC60R108B , SRC60R125B .
History: 2SJ360 | SRC60R075BS | STH6N95K5-2 | KHB8D8N25F
History: 2SJ360 | SRC60R075BS | STH6N95K5-2 | KHB8D8N25F
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