SRC60R075BSD88 Todos los transistores

 

SRC60R075BSD88 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SRC60R075BSD88
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 357 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 48 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 2800 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
   Paquete / Cubierta: PDFN8X8-4
     - Selección de transistores por parámetros

 

SRC60R075BSD88 Datasheet (PDF)

 ..1. Size:1146K  sanrise-tech
src60r075bsd88.pdf pdf_icon

SRC60R075BSD88

Datasheet75m, 600V, Super Junction N-Channel Power MOSFET SRC60R075BSGeneral Description SymbolThe Sanrise SRC60R075BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 3.1. Size:619K  sanrise-tech
src60r075bs.pdf pdf_icon

SRC60R075BSD88

Preliminary Datasheet75m, 600V, Super Junction N-Channel Power MOSFET SRC60R075BSGeneral Description SymbolThe Sanrise SRC60R075BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior pow

 5.1. Size:1572K  sanrise-tech
src60r075fbs.pdf pdf_icon

SRC60R075BSD88

Datasheet75m, 600V, Super Junction N-Channel Power MOSFET SRC60R075FBSGeneral Description SymbolThe Sanrise SRC60R075FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensit

 6.1. Size:1038K  1
src60r078b.pdf pdf_icon

SRC60R075BSD88

Datasheet 78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078B General Description Symbol The Sanrise SRC60R078B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

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History: JCS4AN120CA | SPP80P06PH | IRFPC42R | SIHF9540S | AP1RA03GMT-HF | HITJ0203MP | IRFHM8330

 

 
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