SRC60R078B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRC60R078B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 291 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 42 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 38 nS
Cossⓘ - Capacitancia de salida: 136 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.078 Ohm
Búsqueda de reemplazo de SRC60R078B MOSFET
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SRC60R078B datasheet
src60r078b.pdf
Datasheet 78m , 600V, Super Junction N-Channel Power MOSFET SRC60R078B General Description Symbol The Sanrise SRC60R078B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src60r078b.pdf
Datasheet 78m , 600V, Super Junction N-Channel Power MOSFET SRC60R078B General Description Symbol The Sanrise SRC60R078B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src60r078bs.pdf
Datasheet 78m , 600V, Super Junction N-Channel Power MOSFET SRC60R078BS General Description Symbol The Sanrise SRC60R078BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density
src60r075bs.pdf
Preliminary Datasheet 75m , 600V, Super Junction N-Channel Power MOSFET SRC60R075BS General Description Symbol The Sanrise SRC60R075BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior pow
Otros transistores... SRC60R037B , SRC60R045FB , SRC60R064S , SRC60R068BS , SRC60R068BSTL , SRC60R075BS , SRC60R075BSD88 , SRC60R075FBS , 4N60 , SRC60R078BS , SRC60R090BS , SRC60R100B , SRC60R100BS , SRC60R108B , SRC60R125B , SRC60R145B , SRC60R145BS .
History: 2SK345 | DH100P30 | BSC097N06NST
History: 2SK345 | DH100P30 | BSC097N06NST
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