SRC60R078B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRC60R078B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 291 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 42 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 90.3 nC
Tiempo de subida (tr): 38 nS
Conductancia de drenaje-sustrato (Cd): 136 pF
Resistencia entre drenaje y fuente RDS(on): 0.078 Ohm
Paquete / Cubierta: TO247 TO263
Búsqueda de reemplazo de MOSFET SRC60R078B
SRC60R078B Datasheet (PDF)
src60r078b.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Datasheet 78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078B General Description Symbol The Sanrise SRC60R078B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src60r078b.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Datasheet 78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078B General Description Symbol The Sanrise SRC60R078B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src60r078bs.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Datasheet78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078BSGeneral Description SymbolThe Sanrise SRC60R078BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
src60r075bs.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Preliminary Datasheet75m, 600V, Super Junction N-Channel Power MOSFET SRC60R075BSGeneral Description SymbolThe Sanrise SRC60R075BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior pow
src60r075bsd88.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Datasheet75m, 600V, Super Junction N-Channel Power MOSFET SRC60R075BSGeneral Description SymbolThe Sanrise SRC60R075BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
src60r075fbs.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Datasheet75m, 600V, Super Junction N-Channel Power MOSFET SRC60R075FBSGeneral Description SymbolThe Sanrise SRC60R075FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensit
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .