SRC60R108B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRC60R108B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 210 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 31.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 104 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.108 Ohm
Encapsulados: TO247 TO220 TO263
Búsqueda de reemplazo de SRC60R108B MOSFET
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SRC60R108B datasheet
src60r108b.pdf
Datasheet 108m , 600V, Super Junction N-Channel Power MOSFET SRC60R108B General Description Symbol The Sanrise SRC60R108B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src60r100b.pdf
Datasheet 100m , 600V, Super Junction N-Channel Power MOSFET SRC60R100B General Description Symbol The Sanrise SRC60R100B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density a
src60r100bs.pdf
Datasheet 100m , 600V, Super Junction N-Channel Power MOSFET SRC60R100BS General Description Symbol The Sanrise SRC60R100BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density
src60r160fb.pdf
Datasheet 160m , 600V, Super Junction N-Channel Power MOSFET SRC60R160FB General Description Symbol The Sanrise SRC60R160FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
Otros transistores... SRC60R075BS , SRC60R075BSD88 , SRC60R075FBS , SRC60R078B , SRC60R078BS , SRC60R090BS , SRC60R100B , SRC60R100BS , 5N60 , SRC60R125B , SRC60R145B , SRC60R145BS , SRC60R160BS , SRC60R160FB , SRC60R200 , SRC60R230B , SRC60R360 .
History: STH410N4F7-6AG | SRC60R125B | JVL102E | SRC60R075FBS | BSC097N06NST | APM2305AC
History: STH410N4F7-6AG | SRC60R125B | JVL102E | SRC60R075FBS | BSC097N06NST | APM2305AC
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