SRC60R145B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRC60R145B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 178 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 26.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 88 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.145 Ohm
Paquete / Cubierta: PDFN8X8-4
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SRC60R145B Datasheet (PDF)
src60r145b.pdf
Datasheet 145m, 600V, Super Junction N-Channel Power MOSFET SRC60R145B General Description Symbol The Sanrise SRC60R145B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src60r145bs.pdf
Datasheet145m, 600V, Super Junction N-Channel Power MOSFET SRC60R145BSGeneral Description SymbolThe Sanrise SRC60R145BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
src60r160fb.pdf
Datasheet 160m, 600V, Super Junction N-Channel Power MOSFET SRC60R160FB General Description Symbol The Sanrise SRC60R160FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src60r100b.pdf
Datasheet100m, 600V, Super Junction N-Channel Power MOSFET SRC60R100BGeneral Description SymbolThe Sanrise SRC60R100B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity a
src60r108b.pdf
Datasheet 108m, 600V, Super Junction N-Channel Power MOSFET SRC60R108B General Description Symbol The Sanrise SRC60R108B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src60r100bs.pdf
Datasheet100m, 600V, Super Junction N-Channel Power MOSFET SRC60R100BSGeneral Description SymbolThe Sanrise SRC60R100BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
src60r125b.pdf
Datasheet 125m, 600V, Super Junction N-Channel Power MOSFET SRC60R125B General Description Symbol The Sanrise SRC60R125B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src60r160bs.pdf
Datasheet160m, 600V, Super Junction N-Channel Power MOSFET SRC60R160BSGeneral Description SymbolThe Sanrise SRC60R160BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
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