SRC60R160BS Todos los transistores

 

SRC60R160BS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SRC60R160BS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 178.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.3 V
   Qgⓘ - Carga de la puerta: 40.4 nC
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 129.6 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
   Paquete / Cubierta: PDFN8X8-4
 

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SRC60R160BS Datasheet (PDF)

 ..1. Size:1572K  sanrise-tech
 src60r160bs.pdf pdf_icon

SRC60R160BS

Datasheet160m, 600V, Super Junction N-Channel Power MOSFET SRC60R160BSGeneral Description SymbolThe Sanrise SRC60R160BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 5.1. Size:1325K  sanrise-tech
 src60r160fb.pdf pdf_icon

SRC60R160BS

Datasheet 160m, 600V, Super Junction N-Channel Power MOSFET SRC60R160FB General Description Symbol The Sanrise SRC60R160FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 7.1. Size:1049K  sanrise-tech
 src60r100b.pdf pdf_icon

SRC60R160BS

Datasheet100m, 600V, Super Junction N-Channel Power MOSFET SRC60R100BGeneral Description SymbolThe Sanrise SRC60R100B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity a

 7.2. Size:1623K  sanrise-tech
 src60r108b.pdf pdf_icon

SRC60R160BS

Datasheet 108m, 600V, Super Junction N-Channel Power MOSFET SRC60R108B General Description Symbol The Sanrise SRC60R108B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

MOSTRAR MÁS

Otros transistores... SRC60R078BS , SRC60R090BS , SRC60R100B , SRC60R100BS , SRC60R108B , SRC60R125B , SRC60R145B , SRC60R145BS , 75N75 , SRC60R160FB , SRC60R200 , SRC60R230B , SRC60R360 , SRC60R360B , SRC60R420 , SRC60R450B , SRC60R680E .

History: 2SK4197FS

 

 
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