SRC60R950E Todos los transistores

 

SRC60R950E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SRC60R950E
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 29 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.2 V
   Qgⓘ - Carga de la puerta: 8.5 nC
   trⓘ - Tiempo de subida: 33 nS
   Cossⓘ - Capacitancia de salida: 20 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.95 Ohm
   Paquete / Cubierta: TO252 TO251 TO220F

 Búsqueda de reemplazo de MOSFET SRC60R950E

 

SRC60R950E Datasheet (PDF)

 ..1. Size:566K  sanrise-tech
src60r950e.pdf

SRC60R950E
SRC60R950E

Datasheet 950m, 600V, Super Junction N-Channel Power MOSFET SRC60R950E General Description Symbol The Sanrise SRC60R950E is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 8.1. Size:1038K  1
src60r078b.pdf

SRC60R950E
SRC60R950E

Datasheet 78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078B General Description Symbol The Sanrise SRC60R078B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 8.2. Size:643K  1
src60r090b.pdf

SRC60R950E
SRC60R950E

Datasheet 90m, 600V, Super Junction N-Channel Power MOSFET SRC60R090B General Description Symbol The Sanrise SRC60R090B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 8.3. Size:1325K  sanrise-tech
src60r160fb.pdf

SRC60R950E
SRC60R950E

Datasheet 160m, 600V, Super Junction N-Channel Power MOSFET SRC60R160FB General Description Symbol The Sanrise SRC60R160FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 8.4. Size:619K  sanrise-tech
src60r075bs.pdf

SRC60R950E
SRC60R950E

Preliminary Datasheet75m, 600V, Super Junction N-Channel Power MOSFET SRC60R075BSGeneral Description SymbolThe Sanrise SRC60R075BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior pow

 8.5. Size:1266K  sanrise-tech
src60r064s.pdf

SRC60R950E
SRC60R950E

Preliminary Datasheet64m, 600V, Super Junction N-Channel Power MOSFET SRC60R064SGeneral Description SymbolThe Sanrise SRC60R064S is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior power

 8.6. Size:1606K  sanrise-tech
src60r030fbs.pdf

SRC60R950E
SRC60R950E

Datasheet30m, 600V, Super Junction N-Channel Power MOSFET SRC60R030FBSGeneral DescriptionSymbolThe Sanrise SRC60R030FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensi

 8.7. Size:1038K  sanrise-tech
src60r078b.pdf

SRC60R950E
SRC60R950E

Datasheet 78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078B General Description Symbol The Sanrise SRC60R078B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 8.8. Size:1146K  sanrise-tech
src60r075bsd88.pdf

SRC60R950E
SRC60R950E

Datasheet75m, 600V, Super Junction N-Channel Power MOSFET SRC60R075BSGeneral Description SymbolThe Sanrise SRC60R075BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 8.9. Size:1755K  sanrise-tech
src60r068bs.pdf

SRC60R950E
SRC60R950E

Datasheet68m, 600V, Super Junction N-Channel Power MOSFET SRC60R068BSGeneral Description SymbolThe Sanrise SRC60R068BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 8.10. Size:1572K  sanrise-tech
src60r075fbs.pdf

SRC60R950E
SRC60R950E

Datasheet75m, 600V, Super Junction N-Channel Power MOSFET SRC60R075FBSGeneral Description SymbolThe Sanrise SRC60R075FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensit

 8.11. Size:1049K  sanrise-tech
src60r100b.pdf

SRC60R950E
SRC60R950E

Datasheet100m, 600V, Super Junction N-Channel Power MOSFET SRC60R100BGeneral Description SymbolThe Sanrise SRC60R100B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity a

 8.12. Size:1103K  sanrise-tech
src60r068bstl.pdf

SRC60R950E
SRC60R950E

Datasheet68m, 600V, Super Junction N-Channel Power MOSFET SRC60R068BSGeneral Description SymbolThe Sanrise SRC60R068BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 8.13. Size:1422K  sanrise-tech
src60r017fb.pdf

SRC60R950E
SRC60R950E

Datasheet17m, 600V, Super Junction N-Channel Power MOSFET SRC60R017FBGeneral DescriptionSymbolThe Sanrise SRC60R017FB is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 8.14. Size:909K  sanrise-tech
src60r045fb.pdf

SRC60R950E
SRC60R950E

Datasheet 45m 600V, Super Junction N-Channel Power MOSFET SRC60R045FB General Description Symbol The Sanrise SRC60R045FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 8.15. Size:877K  sanrise-tech
src60r200.pdf

SRC60R950E
SRC60R950E

Datasheet 200m, 600V, Super Junction N-Channel Power MOSFET SRC60R200 High Power AC/DC Power Supply General Description Symbol The Sanrise SRC60R200 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applica

 8.16. Size:1771K  sanrise-tech
src60r090bs.pdf

SRC60R950E
SRC60R950E

Datasheet90m, 600V, Super Junction N-Channel Power MOSFET SRC60R090BSGeneral Description SymbolThe Sanrise SRC60R090BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 8.17. Size:1180K  sanrise-tech
src60r037b.pdf

SRC60R950E
SRC60R950E

Datasheet37m, 600V, Super Junction N-Channel Power MOSFET SRC60R037BGeneral Description SymbolThe Sanrise SRC60R037B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an

 8.18. Size:831K  sanrise-tech
src60r360b.pdf

SRC60R950E
SRC60R950E

Datasheet 360m, 600V, Super Junction N-Channel Power MOSFET SRC60R360B General Description Symbol The Sanrise SRC60R360B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 8.19. Size:583K  sanrise-tech
src60r450b.pdf

SRC60R950E
SRC60R950E

Datasheet 450m, 600V, Super Junction N-Channel Power MOSFET SRC60R450B General Description Symbol The Sanrise SRC60R450B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 8.20. Size:1623K  sanrise-tech
src60r108b.pdf

SRC60R950E
SRC60R950E

Datasheet 108m, 600V, Super Junction N-Channel Power MOSFET SRC60R108B General Description Symbol The Sanrise SRC60R108B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 8.21. Size:696K  sanrise-tech
src60r030bs.pdf

SRC60R950E
SRC60R950E

Datasheet 30m, 600V, Super Junction N-Channel Power MOSFET SRC60R030BS General Description Symbol The Sanrise SRC60R030BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 8.22. Size:1172K  sanrise-tech
src60r022fbst4g.pdf

SRC60R950E
SRC60R950E

Datasheet22m, 600V, Super Junction N-Channel Power MOSFET SRC60R022FBSGeneral Description SymbolThe Sanrise SRC60R022FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensit

 8.23. Size:634K  sanrise-tech
src60r360.pdf

SRC60R950E
SRC60R950E

Datasheet 360m, 600V, Super Junction N-Channel Power MOSFET SRC60R360 General Description Symbol The Sanrise SRC60R360 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power d

 8.24. Size:1263K  sanrise-tech
src60r022fbs.pdf

SRC60R950E
SRC60R950E

Datasheet22m, 600V, Super Junction N-Channel Power MOSFET SRC60R022FBSGeneral Description SymbolThe Sanrise SRC60R022FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensit

 8.25. Size:1036K  sanrise-tech
src60r230b.pdf

SRC60R950E
SRC60R950E

Datasheet 230m, 600V, Super Junction N-Channel Power MOSFET SRC60R230B General Description Symbol The Sanrise SRC60R230B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 8.26. Size:1155K  sanrise-tech
src60r145b.pdf

SRC60R950E
SRC60R950E

Datasheet 145m, 600V, Super Junction N-Channel Power MOSFET SRC60R145B General Description Symbol The Sanrise SRC60R145B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 8.27. Size:1904K  sanrise-tech
src60r029fbs.pdf

SRC60R950E
SRC60R950E

Datasheet29m, 600V, Super Junction N-Channel Power MOSFET SRC60R029FBSGeneral Description SymbolThe Sanrise SRC60R029FBS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensit

 8.28. Size:630K  sanrise-tech
src60r420.pdf

SRC60R950E
SRC60R950E

Datasheet 420m, 600V, Super Junction N-Channel Power MOSFET SRC60R420 General Description Symbol The Sanrise SRC60R420 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power d

 8.29. Size:1326K  sanrise-tech
src60r017fbt4g.pdf

SRC60R950E
SRC60R950E

Datasheet17m, 600V, Super Junction N-Channel Power MOSFET SRC60R017FBGeneral Description SymbolThe Sanrise SRC60R017FB is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 8.30. Size:1771K  sanrise-tech
src60r078bs.pdf

SRC60R950E
SRC60R950E

Datasheet78m, 600V, Super Junction N-Channel Power MOSFET SRC60R078BSGeneral Description SymbolThe Sanrise SRC60R078BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 8.31. Size:791K  sanrise-tech
src60r680e.pdf

SRC60R950E
SRC60R950E

Datasheet 680m, 600V, Super Junction N-Channel Power MOSFET SRC60R680E General Description Symbol The Sanrise SRC60R680E is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 8.32. Size:1051K  sanrise-tech
src60r100bs.pdf

SRC60R950E
SRC60R950E

Datasheet100m, 600V, Super Junction N-Channel Power MOSFET SRC60R100BSGeneral Description SymbolThe Sanrise SRC60R100BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 8.33. Size:1319K  sanrise-tech
src60r125b.pdf

SRC60R950E
SRC60R950E

Datasheet 125m, 600V, Super Junction N-Channel Power MOSFET SRC60R125B General Description Symbol The Sanrise SRC60R125B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 8.34. Size:1572K  sanrise-tech
src60r160bs.pdf

SRC60R950E
SRC60R950E

Datasheet160m, 600V, Super Junction N-Channel Power MOSFET SRC60R160BSGeneral Description SymbolThe Sanrise SRC60R160BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 8.35. Size:2173K  sanrise-tech
src60r145bs.pdf

SRC60R950E
SRC60R950E

Datasheet145m, 600V, Super Junction N-Channel Power MOSFET SRC60R145BSGeneral Description SymbolThe Sanrise SRC60R145BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

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