SRC65R068BSTL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRC65R068BSTL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 357.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 48 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9.6 nS
Cossⓘ - Capacitancia de salida: 171 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.068 Ohm
Encapsulados: TOLL
Búsqueda de reemplazo de SRC65R068BSTL MOSFET
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SRC65R068BSTL datasheet
src65r068bstl.pdf
Datasheet 68m , 650V, Super Junction N-Channel Power MOSFET SRC65R068BS General Description Symbol The Sanrise SRC65R068BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density
src65r068bs.pdf
Datasheet 68m , 650V, Super Junction N-Channel Power MOSFET SRC65R068BS General Description Symbol The Sanrise SRC65R068BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density
src65r052fb.pdf
Datasheet 52m 650V, Super Junction N-Channel Power MOSFET SRC65R052FB General Description Symbol The Sanrise SRC65R052FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src65r032fb.pdf
Datasheet 32m , 650V, Super Junction N-Channel Power MOSFET SRC65R032FB General Description Symbol The Sanrise SRC65R032FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density
Otros transistores... SRC60R680E , SRC60R950E , SRC65R024B , SRC65R032FB , SRC65R040B , SRC65R042B , SRC65R052FB , SRC65R068BS , IRFZ46N , SRC65R072B , SRC65R082B , SRC65R085B , SRC65R085BS , SRC65R100B , SRC65R100BS , SRC65R110B , SRC65R110BS .
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