SRC65R072B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRC65R072B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 357.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 48 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 2000 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.072 Ohm
Encapsulados: TO247 TO220 TO263
Búsqueda de reemplazo de SRC65R072B MOSFET
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SRC65R072B datasheet
src65r072b.pdf
Datasheet 72m , 650V, Super Junction N-Channel Power MOSFET SRC65R072B General Description Symbol The Sanrise SRC65R072B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density an
src65r052fb.pdf
Datasheet 52m 650V, Super Junction N-Channel Power MOSFET SRC65R052FB General Description Symbol The Sanrise SRC65R052FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src65r032fb.pdf
Datasheet 32m , 650V, Super Junction N-Channel Power MOSFET SRC65R032FB General Description Symbol The Sanrise SRC65R032FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density
src65r040b.pdf
Datasheet 40m , 650V, Super Junction N-Channel Power MOSFET SRC65R040B General Description Symbol The Sanrise SRC65R040B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density an
Otros transistores... SRC60R950E , SRC65R024B , SRC65R032FB , SRC65R040B , SRC65R042B , SRC65R052FB , SRC65R068BS , SRC65R068BSTL , IRF830 , SRC65R082B , SRC65R085B , SRC65R085BS , SRC65R100B , SRC65R100BS , SRC65R110B , SRC65R110BS , SRC65R145B .
History: MMDF3N04HD
History: MMDF3N04HD
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