SRC65R085B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRC65R085B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 357.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 45 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 171 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
Encapsulados: PDFN8X8-4
Búsqueda de reemplazo de SRC65R085B MOSFET
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SRC65R085B datasheet
src65r085b.pdf
Datasheet 85m , 650V, Super Junction N-Channel Power MOSFET SRC65R085B General Description Symbol The Sanrise SRC65R085B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src65r085bs.pdf
Datasheet 85m , 650V, Super Junction N-Channel Power MOSFET SRC65R085BS General Description Symbol The Sanrise SRC65R085BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density
src65r082b.pdf
Datasheet 82m , 650V, Super Junction N-Channel Power MOSFET SRC65R082B General Description Symbol The Sanrise SRC65R082B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density an
src65r052fb.pdf
Datasheet 52m 650V, Super Junction N-Channel Power MOSFET SRC65R052FB General Description Symbol The Sanrise SRC65R052FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
Otros transistores... SRC65R032FB , SRC65R040B , SRC65R042B , SRC65R052FB , SRC65R068BS , SRC65R068BSTL , SRC65R072B , SRC65R082B , IRF9640 , SRC65R085BS , SRC65R100B , SRC65R100BS , SRC65R110B , SRC65R110BS , SRC65R145B , SRC65R170B , SRC65R180 .
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