SRC65R085BS Todos los transistores

 

SRC65R085BS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SRC65R085BS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 255 W
   Voltaje máximo drenador - fuente |Vds|: 650 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 42 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
   Carga de la puerta (Qg): 104 nC
   Tiempo de subida (tr): 28.4 nS
   Conductancia de drenaje-sustrato (Cd): 69.4 pF
   Resistencia entre drenaje y fuente RDS(on): 0.085 Ohm
   Paquete / Cubierta: TO247 TO220 TO263

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SRC65R085BS Datasheet (PDF)

 ..1. Size:1881K  sanrise-tech
src65r085bs.pdf

SRC65R085BS
SRC65R085BS

Datasheet85m, 650V, Super Junction N-Channel Power MOSFET SRC65R085BSGeneral Description SymbolThe Sanrise SRC65R085BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 4.1. Size:907K  sanrise-tech
src65r085b.pdf

SRC65R085BS
SRC65R085BS

Datasheet 85m, 650V, Super Junction N-Channel Power MOSFET SRC65R085B General Description Symbol The Sanrise SRC65R085B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 6.1. Size:1237K  sanrise-tech
src65r082b.pdf

SRC65R085BS
SRC65R085BS

Datasheet82m, 650V, Super Junction N-Channel Power MOSFET SRC65R082BGeneral Description SymbolThe Sanrise SRC65R082B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an

 7.1. Size:1010K  sanrise-tech
src65r052fb.pdf

SRC65R085BS
SRC65R085BS

Datasheet 52m 650V, Super Junction N-Channel Power MOSFET SRC65R052FB General Description Symbol The Sanrise SRC65R052FB is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 7.2. Size:1197K  sanrise-tech
src65r032fb.pdf

SRC65R085BS
SRC65R085BS

Datasheet32m, 650V, Super Junction N-Channel Power MOSFET SRC65R032FBGeneral Description SymbolThe Sanrise SRC65R032FB is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 7.3. Size:1174K  sanrise-tech
src65r040b.pdf

SRC65R085BS
SRC65R085BS

Datasheet40m, 650V, Super Junction N-Channel Power MOSFET SRC65R040BGeneral Description SymbolThe Sanrise SRC65R040B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an

 7.4. Size:1267K  sanrise-tech
src65r072b.pdf

SRC65R085BS
SRC65R085BS

Datasheet72m, 650V, Super Junction N-Channel Power MOSFET SRC65R072BGeneral Description SymbolThe Sanrise SRC65R072B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an

 7.5. Size:1301K  sanrise-tech
src65r042b.pdf

SRC65R085BS
SRC65R085BS

Datasheet42m, 650V, Super Junction N-Channel Power MOSFET SRC65R042BGeneral Description SymbolThe Sanrise SRC65R042B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an

 7.6. Size:1372K  sanrise-tech
src65r024b.pdf

SRC65R085BS
SRC65R085BS

Datasheet24m, 650V, Super Junction N-Channel Power MOSFET SRC65R024BGeneral Description SymbolThe Sanrise SRC65R024B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an

 7.7. Size:2043K  sanrise-tech
src65r068bs.pdf

SRC65R085BS
SRC65R085BS

Datasheet68m, 650V, Super Junction N-Channel Power MOSFET SRC65R068BSGeneral Description SymbolThe Sanrise SRC65R068BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 7.8. Size:1291K  sanrise-tech
src65r068bstl.pdf

SRC65R085BS
SRC65R085BS

Datasheet68m, 650V, Super Junction N-Channel Power MOSFET SRC65R068BSGeneral Description SymbolThe Sanrise SRC65R068BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

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