SRC65R100B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRC65R100B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 291 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 36.9 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 86 nC
Tiempo de subida (tr): 38 nS
Conductancia de drenaje-sustrato (Cd): 3466 pF
Resistencia entre drenaje y fuente RDS(on): 0.1 Ohm
Paquete / Cubierta: TO247 TO220 TO263
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SRC65R100B Datasheet (PDF)
src65r100b.pdf
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Datasheet100m, 650V, Super Junction N-Channel Power MOSFET SRC65R100BGeneral Description SymbolThe Sanrise SRC65R100B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity a
src65r100bs.pdf
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Datasheet100m, 650V, Super Junction N-Channel Power MOSFET SRC65R100BSGeneral Description SymbolThe Sanrise SRC65R100BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
src65r110bs.pdf
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Datasheet110m, 650V, Super Junction N-Channel Power MOSFET SRC65R110BSGeneral Description SymbolThe Sanrise SRC65R110BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
src65r110b.pdf
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Datasheet 110m, 650V, Super Junction N-Channel Power MOSFET SRC65R110B General Description Symbol The Sanrise SRC65R110B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src65r145b.pdf
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Datasheet145m, 650V, Super Junction N-Channel Power MOSFET SRC65R145BGeneral Description SymbolThe Sanrise SRC65R145B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity a
src65r1k3es.pdf
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Datasheet 1.3, 650V, Super Junction N-Channel Power MOSFET SRC65R1K3ES General Description Symbol The Sanrise SRC65R1K3ES is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src65r180.pdf
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Datasheet 180m, 650V, Super Junction N-Channel Power MOSFET SRC65R180 General Description Symbol The Sanrise SRC65R180 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power d
src65r170b.pdf
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Datasheet170m, 650V, Super Junction N-Channel Power MOSFET SRC65R170BGeneral Description SymbolThe Sanrise SRC65R170B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity a
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