SRC65R100B Todos los transistores

 

SRC65R100B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SRC65R100B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 291 W
   Voltaje máximo drenador - fuente |Vds|: 650 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 36.9 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
   Carga de la puerta (Qg): 86 nC
   Tiempo de subida (tr): 38 nS
   Conductancia de drenaje-sustrato (Cd): 3466 pF
   Resistencia entre drenaje y fuente RDS(on): 0.1 Ohm
   Paquete / Cubierta: TO247 TO220 TO263

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SRC65R100B Datasheet (PDF)

 ..1. Size:1274K  sanrise-tech
src65r100b.pdf

SRC65R100B
SRC65R100B

Datasheet100m, 650V, Super Junction N-Channel Power MOSFET SRC65R100BGeneral Description SymbolThe Sanrise SRC65R100B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity a

 0.1. Size:1851K  sanrise-tech
src65r100bs.pdf

SRC65R100B
SRC65R100B

Datasheet100m, 650V, Super Junction N-Channel Power MOSFET SRC65R100BSGeneral Description SymbolThe Sanrise SRC65R100BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 7.1. Size:1096K  sanrise-tech
src65r110bs.pdf

SRC65R100B
SRC65R100B

Datasheet110m, 650V, Super Junction N-Channel Power MOSFET SRC65R110BSGeneral Description SymbolThe Sanrise SRC65R110BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity

 7.2. Size:936K  sanrise-tech
src65r110b.pdf

SRC65R100B
SRC65R100B

Datasheet 110m, 650V, Super Junction N-Channel Power MOSFET SRC65R110B General Description Symbol The Sanrise SRC65R110B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 7.3. Size:2444K  sanrise-tech
src65r145b.pdf

SRC65R100B
SRC65R100B

Datasheet145m, 650V, Super Junction N-Channel Power MOSFET SRC65R145BGeneral Description SymbolThe Sanrise SRC65R145B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity a

 7.4. Size:851K  sanrise-tech
src65r1k3es.pdf

SRC65R100B
SRC65R100B

Datasheet 1.3, 650V, Super Junction N-Channel Power MOSFET SRC65R1K3ES General Description Symbol The Sanrise SRC65R1K3ES is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power

 7.5. Size:553K  sanrise-tech
src65r180.pdf

SRC65R100B
SRC65R100B

Datasheet 180m, 650V, Super Junction N-Channel Power MOSFET SRC65R180 General Description Symbol The Sanrise SRC65R180 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power d

 7.6. Size:2005K  sanrise-tech
src65r170b.pdf

SRC65R100B
SRC65R100B

Datasheet170m, 650V, Super Junction N-Channel Power MOSFET SRC65R170BGeneral Description SymbolThe Sanrise SRC65R170B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity a

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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