SRC65R110BS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRC65R110BS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 255 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 42 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 38 nS
Cossⓘ - Capacitancia de salida: 3466 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
Encapsulados: PDFN8X8-4
Búsqueda de reemplazo de SRC65R110BS MOSFET
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SRC65R110BS datasheet
src65r110bs.pdf
Datasheet 110m , 650V, Super Junction N-Channel Power MOSFET SRC65R110BS General Description Symbol The Sanrise SRC65R110BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density
src65r110b.pdf
Datasheet 110m , 650V, Super Junction N-Channel Power MOSFET SRC65R110B General Description Symbol The Sanrise SRC65R110B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src65r145b.pdf
Datasheet 145m , 650V, Super Junction N-Channel Power MOSFET SRC65R145B General Description Symbol The Sanrise SRC65R145B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density a
src65r1k3es.pdf
Datasheet 1.3 , 650V, Super Junction N-Channel Power MOSFET SRC65R1K3ES General Description Symbol The Sanrise SRC65R1K3ES is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
Otros transistores... SRC65R068BSTL , SRC65R072B , SRC65R082B , SRC65R085B , SRC65R085BS , SRC65R100B , SRC65R100BS , SRC65R110B , RU7088R , SRC65R145B , SRC65R170B , SRC65R180 , SRC65R1K3ES , SRC65R220 , SRC65R220BS , SRC65R220M2 , SRC65R230BS .
History: BLF888 | IRLML6401PBF
History: BLF888 | IRLML6401PBF
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