SRC65R110BS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRC65R110BS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 255 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 42 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 38 nS
Cossⓘ - Capacitancia de salida: 3466 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
Paquete / Cubierta: PDFN8X8-4
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SRC65R110BS Datasheet (PDF)
src65r110bs.pdf

Datasheet110m, 650V, Super Junction N-Channel Power MOSFET SRC65R110BSGeneral Description SymbolThe Sanrise SRC65R110BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
src65r110b.pdf

Datasheet 110m, 650V, Super Junction N-Channel Power MOSFET SRC65R110B General Description Symbol The Sanrise SRC65R110B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src65r145b.pdf

Datasheet145m, 650V, Super Junction N-Channel Power MOSFET SRC65R145BGeneral Description SymbolThe Sanrise SRC65R145B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity a
src65r1k3es.pdf

Datasheet 1.3, 650V, Super Junction N-Channel Power MOSFET SRC65R1K3ES General Description Symbol The Sanrise SRC65R1K3ES is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
Otros transistores... SRC65R068BSTL , SRC65R072B , SRC65R082B , SRC65R085B , SRC65R085BS , SRC65R100B , SRC65R100BS , SRC65R110B , MMD60R360PRH , SRC65R145B , SRC65R170B , SRC65R180 , SRC65R1K3ES , SRC65R220 , SRC65R220BS , SRC65R220M2 , SRC65R230BS .
History: SLP240C03D | AMS6006 | FDMC86340
History: SLP240C03D | AMS6006 | FDMC86340



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