SRC65R220BS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRC65R220BS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 179 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 21.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 110 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.22 Ohm
Encapsulados: TO247 TO220 TO263
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SRC65R220BS datasheet
src65r220bs.pdf
Datasheet 220m , 650V, Super Junction N-Channel Power MOSFET SRC65R220BS General Description Symbol The Sanrise SRC65R220BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density
src65r220m2.pdf
Datasheet 220m , 650V, Super Junction N-Channel Power MOSFET SRC65R220M2 General Description Symbol The Sanrise SRC65R220M2 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density
src65r220.pdf
Datasheet 220m , 650V, PDFN8*8, Super Junction N-Channel Power MOSFET SRC65R220 General Description Symbol The Sanrise SRC65R220 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior
src65r230bs.pdf
Datasheet 230m , 650V, Super Junction N-Channel Power MOSFET SRC65R230BS General Description Symbol The Sanrise SRC65R230BS is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density
Otros transistores... SRC65R100BS, SRC65R110B, SRC65R110BS, SRC65R145B, SRC65R170B, SRC65R180, SRC65R1K3ES, SRC65R220, AO4468, SRC65R220M2, SRC65R230BS, SRC65R290E, SRC65R330B, SRC65R330EC, SRC65R340EC, SRC65R600EC, SRC65R650
History: WMO13N50C4 | 2SK507 | 2SK518
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