SRC65R230BS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRC65R230BS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 178 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 21.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 1820 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm
Paquete / Cubierta: PDFN8X8-4
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SRC65R230BS Datasheet (PDF)
src65r230bs.pdf

Datasheet230m, 650V, Super Junction N-Channel Power MOSFET SRC65R230BSGeneral Description SymbolThe Sanrise SRC65R230BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
src65r220bs.pdf

Datasheet220m, 650V, Super Junction N-Channel Power MOSFET SRC65R220BSGeneral Description SymbolThe Sanrise SRC65R220BS is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
src65r220m2.pdf

Datasheet220m, 650V, Super Junction N-Channel Power MOSFET SRC65R220M2General Description SymbolThe Sanrise SRC65R220M2 is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity
src65r220.pdf

Datasheet 220m, 650V, PDFN8*8, Super Junction N-Channel Power MOSFET SRC65R220 General Description Symbol The Sanrise SRC65R220 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: NCEP85T25VD | IRFN150SMD | AP99LT06GP-HF | HAT2033RJ | FDMC8554 | 2N6904 | WMK040N08HGS
History: NCEP85T25VD | IRFN150SMD | AP99LT06GP-HF | HAT2033RJ | FDMC8554 | 2N6904 | WMK040N08HGS



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