SRC70R380E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRC70R380E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 87 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 45.4 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
Encapsulados: TO263 TO252 TO220
Búsqueda de reemplazo de SRC70R380E MOSFET
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SRC70R380E datasheet
src70r380e.pdf
Datasheet 380m , 700V, Super Junction N-Channel Power MOSFET SRC70R380E General Description Symbol The Sanrise SRC70R380E is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src70r900.pdf
Datasheet 900m , 700V, Super Junction N-Channel Power MOSFET SRC70R900 General Description Symbol The Sanrise SRC70R900 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and
src70r048b.pdf
Datasheet 48m , 700V, Super Junction N-Channel Power MOSFET SRC70R048B General Description Symbol The Sanrise SRC70R048B is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density an
src70r230.pdf
Datasheet 230m , 700V, Super Junction N-Channel Power MOSFET SRC70R230 General Description Symbol The Sanrise SRC70R230 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power d
Otros transistores... SRC65R600EC, SRC65R650, SRC65R650B, SRC65R800, SRC65R800E, SRC65R800M2, SRC70R048B, SRC70R230, IRFB4110, SRC70R670E, SRC70R900, SRH03P098LMTR-G, SRH03P098LD33TR-G, SRH03P142LMTR-G, SRH03P142LD33TR-G, SRH03P142LDTR-G, SRH04N260L
History: SPC1018 | SPN30T10 | WMN80R1K5S
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