SRC70R380E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRC70R380E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 87 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 45.4 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
Paquete / Cubierta: TO263 TO252 TO220
- Selección de transistores por parámetros
SRC70R380E Datasheet (PDF)
src70r380e.pdf

Datasheet 380m, 700V, Super Junction N-Channel Power MOSFET SRC70R380E General Description Symbol The Sanrise SRC70R380E is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power
src70r900.pdf

Datasheet900m, 700V, Super Junction N-Channel Power MOSFET SRC70R900General Description SymbolThe Sanrise SRC70R900 is a high voltage powerMOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and
src70r048b.pdf

Datasheet48m, 700V, Super Junction N-Channel Power MOSFET SRC70R048BGeneral Description SymbolThe Sanrise SRC70R048B is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity an
src70r230.pdf

Datasheet 230m, 700V, Super Junction N-Channel Power MOSFET SRC70R230 General Description Symbol The Sanrise SRC70R230 is a high voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power d
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: ME2306BS-G | NVD14N03R
History: ME2306BS-G | NVD14N03R



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