SRT03N010LD56TR-GS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRT03N010LD56TR-GS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 178 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 284 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.4 V
Carga de la puerta (Qg): 90 nC
Tiempo de subida (tr): 9 nS
Conductancia de drenaje-sustrato (Cd): 3000 pF
Resistencia entre drenaje y fuente RDS(on): 0.001 Ohm
Paquete / Cubierta: PDFN5X6
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SRT03N010LD56TR-GS Datasheet (PDF)
srt03n010ld56tr-gs.pdf
Datasheet 1.0m, 30V, N-Channel Power MOSFET SRT03N010LD56TR-GS General Description Symbol The Sanrise SRT03N010LD56TR-GS uses Drain 5,6,7,8advanced split gate trench technology. It has extremely low on resistance, low gate charge and fast switching time. This device is ideal for Motor Gate 4driver, BMS, DCDC converter and power management. Source 1,2,3The SRT03N010LD5
srt03n010ld56.pdf
Datasheet 1.0m, 30V, N-Channel Power MOSFET SRT03N010LD56TR-G General Description Symbol The Sanrise SRT03N010LD56TR-G uses Drain 5,6,7,8advanced split gate trench technology. It has extremely low on resistance, low gate charge and fast switching time. This device is ideal for Motor Gate 4driver, BMS, DCDC converter and power management. Source 1,2,3The SRT03N010LD56T
srt03n016l.pdf
Datasheet1.6m, 30V, N-Channel Power MOSFET SRT03N016LGeneral Description SymbolThe Sanrise SRT03N016L is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and outstanding e
srt03n011l.pdf
Datasheet1.1m, 30V, N-Channel Power MOSFET SRT03N011LGeneral Description SymbolThe Sanrise SRT03N011L is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and outstanding e
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