SRT03N020L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRT03N020L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 90 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 80 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.1 V
Carga de la puerta (Qg): 38.6 nC
Tiempo de subida (tr): 8 nS
Conductancia de drenaje-sustrato (Cd): 640 pF
Resistencia entre drenaje y fuente RDS(on): 0.002 Ohm
Paquete / Cubierta: PDFN5X6 PDFN3.3X3.3
Búsqueda de reemplazo de MOSFET SRT03N020L
SRT03N020L Datasheet (PDF)
srt03n020l.pdf
Datasheet 2.0m, 30V, N-Channel Power MOSFET SRT03N020L General Description Symbol The Sanrise SRT03N020L uses advanced split Drain 5,6,7,8gate trench technology. It has extremely low on resistance, low gate charge and fast switching time. This device is ideal for Motor driver, BMS, Gate 4DC-DC converter and power management. The SRT03N020L break down voltage is 30V Sour
srt03n023h.pdf
Datasheet 2.3m, 30V, N-Channel Power MOSFET SRT03N023H General Description Symbol The Sanrise SRT03N023H uses advanced split Drain 5,6,7,8gate trench technology. It has extremely low on resistance, low gate charge and fast switching time. This device is ideal for Motor driver, BMS, Gate 4DC-DC converter and power management. The SRT03N023H break down voltage is 30V Sour
srt03n023l.pdf
Datasheet 2.3m, 30V, N-Channel Power MOSFET SRT03N023L General Description Symbol The Sanrise SRT03N023L uses advanced split Drain 5,6,7,8gate trench technology. It has extremely low on resistance, low gate charge and fast switching time. This device is ideal for Motor driver, BMS, Gate 4DC-DC converter and power management. The SRT03N023L break down voltage is 30V Sour
srt03n050ld56tr-g.pdf
Datasheet 5.0m, 30V, N-Channel Power MOSFET SRT03N050LD56TR-G General Description Symbol The Sanrise SRT03N050LD56TR-G is a high Drain 5,6,7,8voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, Gate 4low gate charge and fast switching time, making it especially suitable for applications which S
srt03n010ld56.pdf
Datasheet 1.0m, 30V, N-Channel Power MOSFET SRT03N010LD56TR-G General Description Symbol The Sanrise SRT03N010LD56TR-G uses Drain 5,6,7,8advanced split gate trench technology. It has extremely low on resistance, low gate charge and fast switching time. This device is ideal for Motor Gate 4driver, BMS, DCDC converter and power management. Source 1,2,3The SRT03N010LD56T
srt03n010ld56tr-gs.pdf
Datasheet 1.0m, 30V, N-Channel Power MOSFET SRT03N010LD56TR-GS General Description Symbol The Sanrise SRT03N010LD56TR-GS uses Drain 5,6,7,8advanced split gate trench technology. It has extremely low on resistance, low gate charge and fast switching time. This device is ideal for Motor Gate 4driver, BMS, DCDC converter and power management. Source 1,2,3The SRT03N010LD5
srt03n016l.pdf
Datasheet1.6m, 30V, N-Channel Power MOSFET SRT03N016LGeneral Description SymbolThe Sanrise SRT03N016L is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and outstanding e
srt03n011l.pdf
Datasheet1.1m, 30V, N-Channel Power MOSFET SRT03N011LGeneral Description SymbolThe Sanrise SRT03N011L is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and outstanding e
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