SRT03N023H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SRT03N023H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 67 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 116 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 38.7 nC
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 640 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0023 Ohm
   Paquete / Cubierta: PDFN5X6

Búsqueda de reemplazo de MOSFET SRT03N023H

SRT03N023H Datasheet (PDF)

..1. Size:1002K sanrise-tech
srt03n023h.pdf

Datasheet 2.3m, 30V, N-Channel Power MOSFET SRT03N023H General Description Symbol The Sanrise SRT03N023H uses advanced split Drain 5,6,7,8gate trench technology. It has extremely low on resistance, low gate charge and fast switching time. This device is ideal for Motor driver, BMS, Gate 4DC-DC converter and power management. The SRT03N023H break down voltage is 30V Sour

5.1. Size:1027K sanrise-tech
srt03n023l.pdf

Datasheet 2.3m, 30V, N-Channel Power MOSFET SRT03N023L General Description Symbol The Sanrise SRT03N023L uses advanced split Drain 5,6,7,8gate trench technology. It has extremely low on resistance, low gate charge and fast switching time. This device is ideal for Motor driver, BMS, Gate 4DC-DC converter and power management. The SRT03N023L break down voltage is 30V Sour

6.1. Size:1277K sanrise-tech
srt03n020l.pdf

Datasheet 2.0m, 30V, N-Channel Power MOSFET SRT03N020L General Description Symbol The Sanrise SRT03N020L uses advanced split Drain 5,6,7,8gate trench technology. It has extremely low on resistance, low gate charge and fast switching time. This device is ideal for Motor driver, BMS, Gate 4DC-DC converter and power management. The SRT03N020L break down voltage is 30V Sour

7.1. Size:1015K sanrise-tech
srt03n050ld56tr-g.pdf

Datasheet 5.0m, 30V, N-Channel Power MOSFET SRT03N050LD56TR-G General Description Symbol The Sanrise SRT03N050LD56TR-G is a high Drain 5,6,7,8voltage power MOSFET, fabricated using advanced super junction technology. The resulting device has extremely low on resistance, Gate 4low gate charge and fast switching time, making it especially suitable for applications which S

7.2. Size:1187K sanrise-tech
srt03n010ld56.pdf

Datasheet 1.0m, 30V, N-Channel Power MOSFET SRT03N010LD56TR-G General Description Symbol The Sanrise SRT03N010LD56TR-G uses Drain 5,6,7,8advanced split gate trench technology. It has extremely low on resistance, low gate charge and fast switching time. This device is ideal for Motor Gate 4driver, BMS, DCDC converter and power management. Source 1,2,3The SRT03N010LD56T

7.3. Size:1146K sanrise-tech
srt03n010ld56tr-gs.pdf

Datasheet 1.0m, 30V, N-Channel Power MOSFET SRT03N010LD56TR-GS General Description Symbol The Sanrise SRT03N010LD56TR-GS uses Drain 5,6,7,8advanced split gate trench technology. It has extremely low on resistance, low gate charge and fast switching time. This device is ideal for Motor Gate 4driver, BMS, DCDC converter and power management. Source 1,2,3The SRT03N010LD5

7.4. Size:1387K sanrise-tech
srt03n016l.pdf

Datasheet1.6m, 30V, N-Channel Power MOSFET SRT03N016LGeneral Description SymbolThe Sanrise SRT03N016L is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and outstanding e

7.5. Size:915K sanrise-tech
srt03n011l.pdf

Datasheet1.1m, 30V, N-Channel Power MOSFET SRT03N011LGeneral Description SymbolThe Sanrise SRT03N011L is a high voltagepower MOSFET, fabricated using advanced superjunction technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and outstanding e

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