SRT04N016LS2TR-GS Todos los transistores

 

SRT04N016LS2TR-GS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SRT04N016LS2TR-GS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 155 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 186 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 V
   Qgⓘ - Carga de la puerta: 85 nC
   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 1600 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0022 Ohm
   Paquete / Cubierta: TO263
 

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SRT04N016LS2TR-GS Datasheet (PDF)

 3.1. Size:1745K  sanrise-tech
 srt04n016ls.pdf pdf_icon

SRT04N016LS2TR-GS

Datasheet 1.6m, 40V, N-Channel Power MOSFET SRT04N016LS General Description Symbol The Sanrise SRT04N016LS is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio

 4.1. Size:1350K  sanrise-tech
 srt04n016l.pdf pdf_icon

SRT04N016LS2TR-GS

Datasheet1.6m, 40V, N-Channel Power MOSFET SRT04N016LGeneral Description SymbolThe Sanrise SRT04N016L is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronous

 5.1. Size:970K  sanrise-tech
 srt04n016il.pdf pdf_icon

SRT04N016LS2TR-GS

Datasheet 1.6m, 40V, N-Channel Power MOSFET SRT04N016IL General Description Symbol The Sanrise SRT04N016IL is a low voltage Drain 5,6,7,8power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4fast switching time, making it especially suitable for applications which require super

MOSTRAR MÁS

Otros transistores... SRT045N012H , SRT045N012HS2 , SRT045N012HTC-GS , SRT045N025H , SRT045N060H , SRT04N012L , SRT04N016IL , SRT04N016L , 2SK3568 , SRT04N016LTC-GS , SRT04N016LDTR-GS , SRT04N024L , SRT04N024LD56TR-GS , SRT04N037L , SRT04N037LS , SRT06N022HD , SRT06N022HS .

History: FDB86363-F085 | RD3L080SN | WPM3005 | IPN80R1K2P7 | SFG150N10KF

 

 
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