SRT06N022HT Todos los transistores

 

SRT06N022HT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SRT06N022HT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 147 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 120 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 80 nC
   Tiempo de subida (tr): 10 nS
   Conductancia de drenaje-sustrato (Cd): 1900 pF
   Resistencia entre drenaje y fuente RDS(on): 0.003 Ohm
   Paquete / Cubierta: TO220

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SRT06N022HT Datasheet (PDF)

 4.1. Size:1564K  sanrise-tech
srt06n022h.pdf

SRT06N022HT SRT06N022HT

Datasheet 2.2m, 60V, N-Channel Power MOSFET SRT06N022H General Description Symbol The Sanrise SRT06N022H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior

 6.1. Size:1131K  sanrise-tech
srt06n027h.pdf

SRT06N022HT SRT06N022HT

Datasheet 2.7m, 60V, N-Channel Power MOSFET SRT06N027H General Description Symbol The Sanrise SRT06N027H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3for applications which req

 7.1. Size:1356K  sanrise-tech
srt06n095l.pdf

SRT06N022HT SRT06N022HT

Datasheet 9.5m, 60V, N-Channel Power MOSFET SRT06N095L General Description Symbol Drain 5,6,7,8The Sanrise SRT06N095L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3for applications which r

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