SRT10N047LD56TR-G Todos los transistores

 

SRT10N047LD56TR-G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SRT10N047LD56TR-G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 104 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 100 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.3 V
   Carga de la puerta (Qg): 92 nC
   Tiempo de subida (tr): 9 nS
   Conductancia de drenaje-sustrato (Cd): 1600 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0047 Ohm
   Paquete / Cubierta: PDFN5X6

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SRT10N047LD56TR-G Datasheet (PDF)

 0.1. Size:768K  sanrise-tech
srt10n047ld56tr-g.pdf

SRT10N047LD56TR-G
SRT10N047LD56TR-G

Datasheet 4.7m, 100V, N-Channel Power MOSFET SRT10N047LD56TR-G General Description Symbol The Sanrise SRT10N047LD56TR-G is a low Drain 5,6,7,8voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, Gate 4low gate charge and fast switching time, making it especially suitable for applications which

 5.1. Size:728K  sanrise-tech
srt10n047hc56tr-g.pdf

SRT10N047LD56TR-G
SRT10N047LD56TR-G

Datasheet 4.7m, 100V, N-Channel Power MOSFET SRT10N047HC56TR-G General Description Symbol The Sanrise SRT10N047HC56TR-G is a low Drain 5,6,7,8voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, Gate 4low gate charge and fast switching time, making it especially suitable for applications which

 5.2. Size:1764K  sanrise-tech
srt10n047h.pdf

SRT10N047LD56TR-G
SRT10N047LD56TR-G

Datasheet4.7m, 100V, N-Channel Power MOSFET SRT10N047HGeneral Description SymbolThe Sanrise SRT10N047H is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerTO-263-2/TO-220C/TO-24

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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Recientemente añadidas las descripciónes de los transistores:

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