SRT10N070L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SRT10N070L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 96.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 84 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.8 nS

Cossⓘ - Capacitancia de salida: 720 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: PDFN5X6

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SRT10N070L datasheet

 ..1. Size:1094K  sanrise-tech
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SRT10N070L

Datasheet 7m , 100V, N-Channel Power MOSFET SRT10N070L General Description Symbol Drain 5,6,7,8 The Sanrise SRT10N070L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3 for applications which re

 5.1. Size:1766K  sanrise-tech
 srt10n070h.pdf pdf_icon

SRT10N070L

Datasheet 7m , 100V, N-Channel Power MOSFET SRT10N070H General Description Symbol The Sanrise SRT10N070H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power TO-220C PDFN5*6 density

 7.1. Size:1506K  sanrise-tech
 srt10n090l.pdf pdf_icon

SRT10N070L

Datasheet 9m , 100V, N-Channel Power MOSFET SRT10N090L General Description Symbol The Sanrise SRT10N090L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronous

 7.2. Size:1919K  sanrise-tech
 srt10n043h.pdf pdf_icon

SRT10N070L

Datasheet 4.3m , 100V, N-Channel Power MOSFET SRT10N043H General Description Symbol The Sanrise SRT10N043H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronou

MOSTRAR MÁS

Otros transistores... SRT10N047HTF, SRT10N047HS2, SRT10N047HT, SRT10N047HTL, SRT10N047HC56TR-G, SRT10N047LD56TR-G, SRT10N070HD, SRT10N070HT, STP65NF06, SRT10N090L, SRT10N090L, SRT10N090L, SRT10N120LM, SRT10N120LD1, SRT10N120LD, SRT10N120LTC, SRT10N120LD56