SRT10N120LTC Todos los transistores

 

SRT10N120LTC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SRT10N120LTC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 96 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 58 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 36 nC
   Tiempo de subida (tr): 40 nS
   Conductancia de drenaje-sustrato (Cd): 364 pF
   Resistencia entre drenaje y fuente RDS(on): 0.012 Ohm
   Paquete / Cubierta: TO220

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SRT10N120LTC Datasheet (PDF)

 4.1. Size:1049K  sanrise-tech
srt10n120l.pdf

SRT10N120LTC
SRT10N120LTC

Datasheet 10m, 100V, N-Channel Power MOSFET SRT10N120L General Description Symbol The Sanrise SRT10N120L uses advanced split Drain 5,6,7,8gate trench technology. It has extremely low on resistance, low gate charge and fast switching Gate 4time. This device is ideal for high frequency switching and synchronous rectification. The SRT10N120L break down voltage is 100V Source

 7.1. Size:1548K  sanrise-tech
srt10n160l.pdf

SRT10N120LTC
SRT10N120LTC

Datasheet 16m, 100V, N-Channel Power MOSFET SRT10N160L General Description Symbol Drain 5,6,7,8The Sanrise SRT10N160L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3for applications which r

 7.2. Size:1247K  sanrise-tech
srt10n130h.pdf

SRT10N120LTC
SRT10N120LTC

Datasheet 13m, 100V, N-Channel Power MOSFET SRT10N130H General Description Symbol The Sanrise SRT10N130H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4fast switching time, making it especially suitable for applications which require superio

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History: LPN2010C

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