SRT10N160LD56 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SRT10N160LD56
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 3.9 nS
   Cossⓘ - Capacitancia de salida: 310 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: PDFN5X6

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SRT10N160LD56 Datasheet (PDF)

4.1. Size:1548K sanrise-tech
srt10n160l.pdf

Datasheet 16m, 100V, N-Channel Power MOSFET SRT10N160L General Description Symbol Drain 5,6,7,8The Sanrise SRT10N160L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3for applications which r

7.1. Size:1049K sanrise-tech
srt10n120l.pdf

Datasheet 10m, 100V, N-Channel Power MOSFET SRT10N120L General Description Symbol The Sanrise SRT10N120L uses advanced split Drain 5,6,7,8gate trench technology. It has extremely low on resistance, low gate charge and fast switching Gate 4time. This device is ideal for high frequency switching and synchronous rectification. The SRT10N120L break down voltage is 100V Source

7.2. Size:1247K sanrise-tech
srt10n130h.pdf

Datasheet 13m, 100V, N-Channel Power MOSFET SRT10N130H General Description Symbol The Sanrise SRT10N130H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4fast switching time, making it especially suitable for applications which require superio

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