SRT10N230LM MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SRT10N230LM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SRT10N230LM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.1 nS

Cossⓘ - Capacitancia de salida: 218 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm

Encapsulados: SOP8

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SRT10N230LM datasheet

4.1. Size:1103K sanrise-tech
srt10n230l.pdf pdf_icon

Datasheet 23m , 100V, N-Channel Power MOSFET SRT10N230L General Description Symbol Drain 5,6,7,8 The Sanrise SRT10N230L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3 for applications which r

5.1. Size:1423K sanrise-tech
srt10n230h.pdf pdf_icon

Datasheet 23m , 100V, N-Channel Power MOSFET SRT10N230H General Description Symbol The Sanrise SRT10N230H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior

8.1. Size:1506K sanrise-tech
srt10n090l.pdf pdf_icon

Datasheet 9m , 100V, N-Channel Power MOSFET SRT10N090L General Description Symbol The Sanrise SRT10N090L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronous

8.2. Size:1919K sanrise-tech
srt10n043h.pdf pdf_icon

Datasheet 4.3m , 100V, N-Channel Power MOSFET SRT10N043H General Description Symbol The Sanrise SRT10N043H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronou