SRT15N075HTC MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRT15N075HTC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 214 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 113 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 1500 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
Encapsulados: TO220
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SRT15N075HTC datasheet
srt15n075h.pdf
Datasheet 7.5m , 150V, N-Channel Power MOSFET SRT15N075H General Description Symbol The Sanrise SRT15N075H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronou
srt15n050h.pdf
Datasheet 5.0m , 150V, N-Channel Power MOSFET SRT15N050H General Description Symbol The Sanrise SRT15N050H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronou
srt15n059h.pdf
Datasheet 5.9m , 150V, N-Channel Power MOSFET SRT15N059H General Description Symbol The Sanrise SRT15N059H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronou
srt15n090h.pdf
Datasheet 9.0m , 150V, N-Channel Power MOSFET SRT15N090H General Description Symbol The Sanrise SRT15N090H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior
Otros transistores... SRT15N050HTC, SRT15N050HS2, SRT15N050HT, SRT15N050HTL, SRT15N059HTC, SRT15N059HS2, SRT15N059HT, SRT15N059HTL, IRF640, SRT15N075HS2, SRT15N075HD56, SRT15N090HTC, SRT15N090HS2, SRT15N090HD56, SRT15N110HD56, SRT15N110HTC, SRT15N110L
History: RFP25N05L | APT1201R5BVFRG
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