SRT15N110HTC Todos los transistores

 4.1. Size:909K  sanrise-tech
 srt15n110h.pdf

Datasheet 11m , 150V, N-Channel Power MOSFET SRT15N110H General Description Symbol The Sanrise SRT15N110H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior

 5.1. Size:760K  sanrise-tech
 srt15n110l.pdf

Datasheet 11m , 150V, N-Channel Power MOSFET SRT15N110L General Description Symbol The Sanrise SRT15N110L is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4 fast switching time, making it especially suitable for applications which require superio

 8.1. Size:1603K  sanrise-tech
 srt15n050h.pdf

Datasheet 5.0m , 150V, N-Channel Power MOSFET SRT15N050H General Description Symbol The Sanrise SRT15N050H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronou

 8.2. Size:1690K  sanrise-tech
 srt15n059h.pdf

Datasheet 5.9m , 150V, N-Channel Power MOSFET SRT15N059H General Description Symbol The Sanrise SRT15N059H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronou

 8.3. Size:1338K  sanrise-tech
 srt15n090h.pdf

Datasheet 9.0m , 150V, N-Channel Power MOSFET SRT15N090H General Description Symbol The Sanrise SRT15N090H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior

 8.4. Size:1655K  sanrise-tech
 srt15n075h.pdf

Datasheet 7.5m , 150V, N-Channel Power MOSFET SRT15N075H General Description Symbol The Sanrise SRT15N075H is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior power density and synchronou

 8.5. Size:1176K  sanrise-tech
 srt15n750l.pdf

Datasheet 75m , 150V, N-Channel Power MOSFET SRT15N750L General Description Symbol Drain 5,6,7,8 The Sanrise SRT15N750L uses advanced split gate trench technology. It has extremely low on resistance, low gate charge and fast switching Gate 4 time. This device is ideal for TV, Adapter applications and DC/DC converters. Source 1,2,3 The SRT15N750L break down voltage is 150V