SRT15N750LD56 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SRT15N750LD56
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 57 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 7 nC
   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 61 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
   Paquete / Cubierta: PDFN5X6

Búsqueda de reemplazo de MOSFET SRT15N750LD56

SRT15N750LD56 Datasheet (PDF)

4.1. Size:1176K sanrise-tech
srt15n750l.pdf

Datasheet 75m, 150V, N-Channel Power MOSFET SRT15N750L General Description Symbol Drain 5,6,7,8The Sanrise SRT15N750L uses advanced split gate trench technology. It has extremely low on resistance, low gate charge and fast switching Gate 4time. This device is ideal for TV, Adapter applications and DC/DC converters. Source 1,2,3The SRT15N750L break down voltage is 150V

8.1. Size:909K sanrise-tech
srt15n110h.pdf

Datasheet 11m, 150V, N-Channel Power MOSFET SRT15N110H General Description Symbol The Sanrise SRT15N110H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior

8.2. Size:1603K sanrise-tech
srt15n050h.pdf

Datasheet5.0m, 150V, N-Channel Power MOSFET SRT15N050HGeneral Description SymbolThe Sanrise SRT15N050H is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronou

8.3. Size:1690K sanrise-tech
srt15n059h.pdf

Datasheet5.9m, 150V, N-Channel Power MOSFET SRT15N059HGeneral Description SymbolThe Sanrise SRT15N059H is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronou

8.4. Size:1338K sanrise-tech
srt15n090h.pdf

Datasheet 9.0m, 150V, N-Channel Power MOSFET SRT15N090H General Description Symbol The Sanrise SRT15N090H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior

8.5. Size:760K sanrise-tech
srt15n110l.pdf

Datasheet 11m, 150V, N-Channel Power MOSFET SRT15N110L General Description Symbol The Sanrise SRT15N110L is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has extremely low on resistance, low gate charge and Gate 4fast switching time, making it especially suitable for applications which require superio

8.6. Size:1655K sanrise-tech
srt15n075h.pdf

Datasheet7.5m, 150V, N-Channel Power MOSFET SRT15N075HGeneral Description SymbolThe Sanrise SRT15N075H is a low voltage powerMOSFET, fabricated using advanced split gatetrench technology. The resulting device hasextremely low on resistance, low gate charge andfast switching time, making it especially suitablefor applications which require superior powerdensity and synchronou

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