VS3602GPMT Todos los transistores

 ..1. Size:875K  cn vgsemi
 vs3602gpmt.pdf

VS3602GPMT 30V/200A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 0.6 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 0.9 m Ultra low on-resistance I D(Silicon Limited) 440 A VitoMOS Technology I D(Package Limited) 200 A Fast Switching and High efficiency PDFN5x6 100% Avalanche tested, 100% Rg tested Part ID Package Type Marki

 9.1. Size:1048K  cn vgsemi
 vs3604dt.pdf

VS3604DT 30V/300A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 1.3 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5V 1.6 m Very low on-resistance RDS(on) @ VGS=4.5 V I D 300 A Ultra-Low Gate Impedance TO-220AB 100% Avalanche Tested Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VS3604DT TO-

 9.2. Size:1026K  cn vgsemi
 vs3606ad.pdf

VS3606AD 30V/110A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 2.6 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 3.5 m Enhancement mode I D 110 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching TO-252 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VS3

 9.3. Size:1190K  cn vgsemi
 vs3605abt.pdf

VS3605ABT 30V/145A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 1.5 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 2.2 m Low RDS(on) to minimize conduction losses I D(Silicon Limited) 145 A 100% Avalanche Tested,100% Rg Tested TDFN3333 Part ID Package Type Marking Packing VS3605ABT TDFN3333 3605AB 5000PCS/Reel Maximum ratings, at TA =25 C

 9.4. Size:1076K  cn vgsemi
 vs3606ap.pdf

VS3606AP 30V/106A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 2.0 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 2.9 m Enhancement mode I D 106 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching PDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Mark

 9.5. Size:1051K  cn vgsemi
 vs3604at.pdf

VS3604AT 30V/180A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 2.1 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 2.8 m Enhancement mode I D 180 A Very low on-resistance RDS(on) @ VGS=4.5 V TO-220AB 100% Avalanche Tested Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VS3604AT TO-220AB 3

 9.6. Size:1017K  cn vgsemi
 vs3606ae.pdf

VS3606AE 30V/92A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 2.5 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 3.4 m Very Low on-resistance I D 92 A Fast Switching 100% Avalanche test PDFN3333 Part ID Package Type Marking Packing VS3606AE PDFN3333 3606AE 5000PCS/Reel Maximum ratings, at TA =25 C, unless otherwise specified Symbol

 9.7. Size:1033K  cn vgsemi
 vs3604dm.pdf

VS3604DM 30V/300A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 1.3 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5V 1.7 m Very low on-resistance RDS(on) @ VGS=4.5 V I D 300 A Ultra-Low Gate Impedance TO-263 100% Avalanche Tested Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VS3604DM TO-26

 9.8. Size:1143K  cn vgsemi
 vs3603gpmt.pdf

VS3603GPMT 30V/200A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 1.1 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 1.6 m Very low on-resistance I D(Silicon Limited) 205 A VitoMOS Technology I D(Package Limited) 200 A Fast Switching and High efficiency PDFN5x6 100% Avalanche test Part ID Package Type Marking Packing VS3603G

 9.9. Size:1035K  cn vgsemi
 vs3606atd.pdf

VS3606ATD 30V/140A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 3 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5V 4 m Enhancement mode I D 140 A Very low on-resistance RDS(on) @ VGS=4.5 V 100% Avalanche Tested TO-263 Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VS3606ATD TO-263 3606ATD

 9.10. Size:1047K  cn vgsemi
 vs3606at.pdf

VS3606AT 30V/140A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 3 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5V 4 m Enhancement mode I D 140 A Very low on-resistance RDS(on) @ VGS=4.5 V TO-220AB 100% Avalanche Tested Pb-free lead plating; RoHS compliant Part ID Package Type Marking Packing VS3606AT TO-220AB 3606AT