VS3605ABT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: VS3605ABT
   Código: 3605AB
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 74 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 145 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Qgⓘ - Carga de la puerta: 101 nC
   trⓘ - Tiempo de subida: 76 nS
   Cossⓘ - Capacitancia de salida: 625 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0018 Ohm
   Paquete / Cubierta: TDFN3333

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VS3605ABT Datasheet (PDF)

..1. Size:1190K cn vgsemi
vs3605abt.pdf

VS3605ABT30V/145A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 1.5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 2.2 m Low RDS(on) to minimize conduction lossesI D(Silicon Limited) 145 A 100% Avalanche Tested,100% Rg TestedTDFN3333Part ID Package Type Marking PackingVS3605ABT TDFN3333 3605AB 5000PCS/ReelMaximum ratings, at TA =25C

9.1. Size:1048K cn vgsemi
vs3604dt.pdf

VS3604DT30V/300A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 1.3 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5V 1.6 m Very low on-resistance RDS(on) @ VGS=4.5 VI D 300 A Ultra-Low Gate ImpedanceTO-220AB 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3604DT TO-

9.2. Size:875K cn vgsemi
vs3602gpmt.pdf

VS3602GPMT30V/200A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 0.6 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 0.9 m Ultra low on-resistanceI D(Silicon Limited) 440 A VitoMOS TechnologyI D(Package Limited) 200 A Fast Switching and High efficiencyPDFN5x6 100% Avalanche tested, 100% Rg testedPart ID Package Type Marki

9.3. Size:1026K cn vgsemi
vs3606ad.pdf

VS3606AD30V/110A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 2.6 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 3.5 m Enhancement modeI D 110 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingTO-252 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3

9.4. Size:1076K cn vgsemi
vs3606ap.pdf

VS3606AP30V/106A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 2.0 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 2.9 m Enhancement modeI D 106 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN5x6 100% Avalanche test Pb-free lead plating; RoHS compliantTape and reelPart ID Package Type Mark

9.5. Size:1051K cn vgsemi
vs3604at.pdf

VS3604AT30V/180A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 2.1 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 2.8 m Enhancement modeI D 180 A Very low on-resistance RDS(on) @ VGS=4.5 VTO-220AB 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3604AT TO-220AB 3

9.6. Size:1017K cn vgsemi
vs3606ae.pdf

VS3606AE30V/92A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 2.5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 3.4 m Very Low on-resistanceI D 92 A Fast Switching 100% Avalanche testPDFN3333Part ID Package Type Marking PackingVS3606AE PDFN3333 3606AE 5000PCS/ReelMaximum ratings, at TA =25C, unless otherwise specifiedSymbol

9.7. Size:1033K cn vgsemi
vs3604dm.pdf

VS3604DM30V/300A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 1.3 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5V 1.7 m Very low on-resistance RDS(on) @ VGS=4.5 VI D 300 A Ultra-Low Gate ImpedanceTO-263 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3604DM TO-26

9.8. Size:1143K cn vgsemi
vs3603gpmt.pdf

VS3603GPMT30V/200A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 1.1 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 1.6 m Very low on-resistanceI D(Silicon Limited) 205 A VitoMOS TechnologyI D(Package Limited) 200 A Fast Switching and High efficiencyPDFN5x6 100% Avalanche testPart ID Package Type Marking PackingVS3603G

9.9. Size:1035K cn vgsemi
vs3606atd.pdf

VS3606ATD30V/140A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 3 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5V 4 m Enhancement modeI D 140 A Very low on-resistance RDS(on) @ VGS=4.5 V 100% Avalanche TestedTO-263 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3606ATD TO-263 3606ATD

9.10. Size:1047K cn vgsemi
vs3606at.pdf

VS3606AT30V/140A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 3 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5V 4 m Enhancement modeI D 140 A Very low on-resistance RDS(on) @ VGS=4.5 VTO-220AB 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3606AT TO-220AB 3606AT

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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