VS3622AP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VS3622AP
Código: 3622AP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 VQgⓘ - Carga de la puerta: 19 nC
trⓘ - Tiempo de subida: 56 nS
Cossⓘ - Capacitancia de salida: 140 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
Paquete / Cubierta: PDFN5X6
Búsqueda de reemplazo de MOSFET VS3622AP
VS3622AP Datasheet (PDF)
vs3622ap.pdf
VS3622AP30V/50A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 7.4 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 11 m Low on-resistance RDS(on) @ VGS=4.5 VI D 50 A 100% Avalanche testPDFN5x6 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3622AP PDFN5x6 3622AP 3000PCS/ReelMaximum ratings, at TA =25C, u
vs3622ae.pdf
VS3622AE 30V/45A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 7.9 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 12 m Enhancement mode I D 45 A Low on-resistance RDS(on) @ VGS=4.5 V Fast Switching PDFN3333 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part ID Package
vs3622aa4.pdf
VS3622AA430V/9.2A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 8.7 m N-ChannelR DS(on),TYP@ VGS=4.5 V 12 m Enhancement modeI D(Silicon Limited) 9.2 A Fast Switching and High efficiencyDFN2x2x0.5-6LPart ID Package Type Marking PackingVS3622AA4 DFN2x2x0.5-6L 3622AA 3000PCS/ReelMaximum ratings, at TA =25C, unless otherwise specif
vs3622aa.pdf
VS3622AA30V/13A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 8.8 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 13 m Enhancement modeI D 13 A Low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingDFN2x2x0.75-6L Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3622AA DFN2x2x0.75-6L 3622
vs3622ae.pdf
VS3622AE30V/45A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 7.9 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 12 m Enhancement modeI D 45 A Low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN3333 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3622AE
vs3622ad.pdf
VS3622AD30V/55A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 8 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 12 m Enhancement modeI D 55 A Low on-resistance RDS(on) @ VGS=4.5 V Fast Switching TO-252 100% Avalanche test Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3622ADTO-2
vs3622as.pdf
VS3622AS30V/15A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 8.4 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 12 m Enhancement modeI D 15 A Low on-resistance RDS(on) @ VGS=4.5 V 100% Avalanche testSOP8 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3622AS SOP8 3622AS 3000PCS/Reel
vs3622aa2.pdf
VS3622AA230V/13A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 8.8 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 13 m Enhancement modeI D 13 A Low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingDFN2x2x0.45-6L Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3622AA2 DFN2x2x0.45-6L 36
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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