VS3628GP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VS3628GP
Código: 3628GP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 12 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 26 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.2 V
Carga de la puerta (Qg): 7.3 nC
Tiempo de subida (tr): 32 nS
Conductancia de drenaje-sustrato (Cd): 310 pF
Resistencia entre drenaje y fuente RDS(on): 0.012 Ohm
Paquete / Cubierta: PDFN5X6
Búsqueda de reemplazo de MOSFET VS3628GP
VS3628GP Datasheet (PDF)
vs3628gp.pdf
VS3628GP30V/24A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 9.1 m Enhancement modeR DS(on),TYP@ VGS=4.5V 13 m VitoMOS TechnologyI D(Silicon Limited) 26 A Fast Switching and High efficiencyI D(Package Limited) 24 A 100% Avalanche Tested,100% Rg TestedPDFN5x6Part ID Package Type Marking PackingVS3628GP PDFN5x6 3628GP 30
vs3628ge.pdf
VS3628GE30V/24A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 8.4 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 13 m VitoMOS TechnologyI D(Silicon Limited) 45 A Fast Switching and High efficiencyI D(Package Limited) 24 A 100% Avalanche Tested,100% Rg TestedPDFN3333Part ID Package Type Marking PackingVS3628GE PDFN3333 3628G
vs3628ga.pdf
VS3628GA30V/12A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 9.4 mR DS(on),TYP@ VGS=4.5 V 13 m Enhancement mode VitoMOS Technology I D 12 A Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching lossesDFN2x2x0.75-6LPart ID Package Type Marking PackingVS3628GA DFN2x2x0.75-6L 3628 3000PCS/ReelMaximum ratings, at TA =25C,
vs3628db.pdf
VS3628DB30V Dual Asymmetric N-Channel Advanced Power MOSFETV DS 30 30 VFeaturesR DS(on),TYP@ VGS=10 V 14 6 m Dual Asymmetric N-ChannelR DS(on),TYP@ VGS=4.5V 23 9 m High Current CapabilityI D 20 40 A Low on-resistance RDS(on) @ VGS=4.5 V Low Gate ChargeDFN3x3 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3628DB DFN3x3 3
vs3628de-g.pdf
VS3628DE-G30V/14A Dual N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 10 m Dual N-ChannelR DS(on),TYP@ VGS=4.5V 14 m Enhancement modeI D(Silicon Limited) 38 A VitoMOS TechnologyI D(Package Limited) 14 A Fast Switching and High efficiencyPDFN3333 Dual 100% Avalanche Tested,100% Rg TestedPart ID Package Type Marking Pac
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