VS3633GA Todos los transistores

 ..1. Size:992K  cn vgsemi
 vs3633ga.pdf

VS3633GA 30V/12A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 11 m R DS(on),TYP@ VGS=4.5 V 16 m Enhancement mode VitoMOS Technology I D 12 A Optimized Qg, Qgd, and Qgd/Qgs ratio to minimize switching losses DFN2x2x0.75-6L Part ID Package Type Marking Packing VS3633GA DFN2x2x0.75-6L 3633 3000PCS/Reel Maximum ratings, at TA =25 C,

 7.1. Size:836K  cn vgsemi
 vs3633ge.pdf

VS3633GE 30V/24A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 9.5 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 15 m VitoMOS Technology I D(Silicon Limited) 32 A Fast Switching and High efficiency I D(Package Limited) 24 A 100% Avalanche Tested,100% Rg Tested PDFN3333 Part ID Package Type Marking Packing VS3633GE PDFN3333 3633G

 9.1. Size:1065K  cn vgsemi
 vs3638de-g.pdf

VS3638DE-G 30V/15A Dual N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10V 12 m Dual N-Channel R DS(on),TYP@ VGS=4.5V 20 m Enhancement mode I D(Silicon Limited) 27 A VitoMOS Technology I D(Package Limited) 15 A Fast Switching and High efficiency PDFN3333 Dual 100% Avalanche Tested,100% Rg Tested Part ID Package Type Marking Pac

 9.2. Size:1664K  cn vgsemi
 vs3638ge.pdf

VS3638GE 30V/23A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 11 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 20 m VitoMOS Technology I D(Silicon Limited) 40 A Fast Switching and High efficiency I D(Package Limited) 23 A 100% Avalanche Tested,100% Rg Tested PDFN3333 Part ID Package Type Marking Packing VS3638GE PDFN3333 3638GE

 9.3. Size:1074K  cn vgsemi
 vs3638ga.pdf

VS3638GA 30V/12A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 10 m R DS(on),TYP@ VGS=4.5 V 18 m Enhancement mode VitoMOS Technology I D 12 A Low Gate Charge DFN2x2x0.75-6L Part ID Package Type Marking Packing VS3638GA DFN2x2x0.75-6L 3638 3000PCS/Reel Maximum ratings, at TA =25 C, unless otherwise specified Symbol Parameter Ratin