VS3646ACL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VS3646ACL
Código: VS38
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 4.6 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.2 V
Carga de la puerta (Qg): 6.7 nC
Tiempo de subida (tr): 3 nS
Conductancia de drenaje-sustrato (Cd): 60 pF
Resistencia entre drenaje y fuente RDS(on): 0.034 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET VS3646ACL
VS3646ACL Datasheet (PDF)
vs3646acl.pdf
VS3646ACL30V/4.6A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=4.5V 22 m Enhancement modeR DS(on),TYP@ VGS=2.5V 26 mI D(Silicon limited) 4.6 ASOT23Part ID Package Type Marking PackingVS3646ACL SOT23 VS38 3000pcs/ReelMaximum ratings, at T A=25 C, unless otherwise specifiedSymbol Parameter Rating UnitV(BR)DSS Drain-source breakdown voltage
vs3646acm.pdf
VS3646ACM30V/5A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 20 m Enhancement modeR DS(on),TYP@ VGS=4.5V 32 mI D(Silicon limited) 5 ASOT23Part ID Package Type Marking PackingVS3646ACM SOT23 VS37 3000pcs/ReelMaximum ratings, at T A=25 C, unless otherwise specifiedSymbol Parameter Rating UnitV(BR)DSS Drain-Source breakdown voltage 30 V
vs3640ds.pdf
VS3640DS 30V/9A Dual N-Channel Advanced Power MOSFET Features V DS 30 V R DS(on),TYP@ VGS=10 V 16 m Dual N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 24 m Enhancement mode I D 9 A Fast Switching High Effective SOP8 Pb-free lead plating; RoHS compliant; Halogen-Free Tape and reel Part ID Package Type Marking information VS
vs3640aa.pdf
VS3640AA30V/10A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 14 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 20 m Fast Switching and High efficiencyI D 10 A Pb-free lead plating; RoHS compliantDFN2x2x0.75-6LPart ID Package Type Marking PackingVS3640AA DFN2x2x0.75-6L 3640 3000PCS/ReelMaximum ratings, at TA =25C, unless otherwise s
vs3640ad.pdf
VS3640AD30V/28A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 16 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 24 m Enhancement modeI D 28 A Low on-resistance RDS(on) @ VGS=4.5 VTO-252 Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliantTape and reelPart ID Package Type Markinginfor
vs3640ac.pdf
VS3640AC30V/6A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 19 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 27 m Enhancement modeI D 6 A Low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingSOT23 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3640AC SOT23 VS03 3000pcs/reelMaximu
vs3640db.pdf
VS3640DB30V Dual Asymmetric N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 14 m Dual N-ChannelR DS(on),TYP@ VGS=4.5 V 22 m High Current CapabilityI D 25 A Low on-resistance RDS(on) @ VGS=4.5 V Low Gate ChargeDFN3x3 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3640DB DFN3x3 3640DB 5000pcs/Reel
vs3647db.pdf
VS3647DB30V Dual Asymmetric N-Channel Advanced Power MOSFETV DS 30 30 VFeaturesR DS(on),TYP@ VGS=10 V 8.2 4.9 m Dual Asymmetric N-ChannelR DS(on),TYP@ VGS=4.5V 12 7.7 m VitoMOS TechnologyI D(Wire bond Limited) 24 36 A 100% Avalanche Tested,100% Rg TestedDFN3x3Part ID Package Type Marking PackingVS3647DB DFN3x3 3647DB 5000pcs/ReelMaximum ratings, at
vs3640de.pdf
VS3640DE30V/24A Dual N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 15 m Dual N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 24 m Enhancement modeI D 24 A Low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN3333 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking Pa
vs3645ge.pdf
VS3645GE30V/16A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 13.5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 23 m VitoMOS TechnologyI D(Silicon Limited) 22 A Fast Switching and High efficiencyI D(Package Limited) 16 A 100% Avalanche Tested,100% Rg TestedPDFN3333Part ID Package Type Marking PackingVS3645GE PDFN3333
vs3640bc.pdf
VS3640BC30V/5A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=4.5 V 29 m N-Channel2.5V Logic Level ControlR DS(on),TYP@ VGS=2.5 V 36 m Enhancement modeI D 5 A Low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingSOT23 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3640BC SOT23 VS06 3000pcs/reelMax
vs3640at.pdf
VS3640AT30V/30A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 15 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 22 m Very low on-resistance RDS(on) @ VGS=4.5 VI D 30 A Fast SwitchingTO-220AB High conversion efficiency Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3640AT TO-220AB 3640AT 50pcs/TubeM
vs3640ds.pdf
VS3640DS30V/9A Dual N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 16 m Dual N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 24 m Enhancement modeI D 9 A Fast Switching High EffectiveSOP8 Pb-free lead plating; RoHS compliant; Halogen-FreePart ID Package Type Marking PackingVS3640DS SOP8 3640DS 3000pcs/reelMaxim
vs3645de-g.pdf
VS3645DE-G30V/12A Dual N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10V 14 m Dual N-ChannelR DS(on),TYP@ VGS=4.5V 22 m Enhancement modeI D(Silicon Limited) 20 A VitoMOS TechnologyI D(Package Limited) 12 A Fast Switching and High efficiencyPDFN3333 Dual 100% Avalanche Tested,100% Rg TestedPart ID Package Type Marking Pac
vs3640dp.pdf
VS3640DP30V/30A Dual N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 14 m Dual N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 22 m Enhancement modeI D 30 A Low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN5x6 Dual 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Markin
vs3645ga.pdf
VS3645GA30V/10A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 15 mR DS(on),TYP@ VGS=4.5 V 23 m Enhancement mode VitoMOS Technology I D 10 A Low Gate ChargeDFN2x2x0.75-6LPart ID Package Type Marking PackingVS3645GA DFN2x2x0.75-6L 3645 3000PCS/ReelMaximum ratings, at TA =25C, unless otherwise specifiedSymbol Parameter Ratin
vs3640dp3.pdf
VS3640DP330V/30A Dual N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 14 m Dual N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 22 m Enhancement modeI D 30 A Low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN5x6 Dual 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marki
vs3640ae.pdf
VS3640AE30V/25A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 13.5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 23 m Fast Switching and High efficiencyI D(Silicon Limited) 25 A 100% Avalanche testPDFN3333Part ID Package Type Marking PackingVS3640AE PDFN3333 3640AE 5000PCS/ReelMaximum ratings, at TA =25C, unless otherwise specified
vs3640as.pdf
VS3640AS30V/11A N-Channel Advanced Power MOSFETV DS 30 VFeaturesR DS(on),TYP@ VGS=10 V 14 m N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 22 m Enhancement modeI D 11 A Low on-resistance RDS(on) @ VGS=4.5 V 100% Avalanche testSOP8 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3640AS SOP8 3640AS 3000PCS/Reel
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