STM8405 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STM8405
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 22 V
Corriente continua de drenaje |Id|: 7 A
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 14.1 nC
Conductancia de drenaje-sustrato (Cd): 145 pF
Resistencia entre drenaje y fuente RDS(on): 0.025 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de MOSFET STM8405
STM8405 Datasheet (PDF)
stm8405.pdf
S TM8405S amHop Microelectronics C orp.MAY .04,2006 ver 1.5Dual Enhancement Mode Field Effect Transistor ( N and P Channel)(N-C hannel) (PPR ODUC T S UMMAR Y PR ODUC T S UMMAR Y -C hannel)VDS S ID R DS (ON) ( m ) Max VDS S ID R DS (ON) ( m ) Max25 @ VGS =10V 50 @ VGS =-10V-30V -5A30V 7A40 @ VGS =4.5V 70 @ VGS =-4.5VD1 D1 D2 D28 7 6 5SO-811 2 3 4S 1 G 1 S
stm8401.pdf
S T M8401S amHop Microelectronics C orp.May.26, 2004 ver1.1Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)(N-C hannel) (PP R ODUC T S UMMAR Y P R ODUC T S UMMAR Y -C hannel)V DS S ID R DS (ON) ( m W ) Max V DS S ID R DS (ON) ( m W ) Max25 @ VG S = 10V 55 @ V G S = -10V -30V -4.5A 7A 30V40 @ V G S = 4.5V 85 @ V G S = -4.5VD1 D1 D2 D28 7 6 5S O-81
stm8456.pdf
STM8456aS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor ( N and P Channel )PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID33 @ VGS=10V 45 @ VGS=-10V40V 6.2A -40V -5.3A45 @ VGS=4.5V 70 @ VGS=-4.5VD2 5 4 G 26 3D2 S 2D1 7 2G 1S O-8D1 8 1S 11(TA=25C unless otherwi
stm8458.pdf
STM8458aS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor ( N and P Channel )PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID32 @ VGS=10V 48 @ VGS=-10V40V 6.3A -40V -5.1A42 @ VGS=4.5V 68 @ VGS=-4.5VD2 5 4 G 26 3D2 S 2D1 7 2G 1S O-8D1 8 1S 11(TA=25C unless otherwi
stm8457.pdf
GreenProductSTM8457SamHop Microelectronics Corp.Dec.21,2009 Ver1.1Dual Enhancement Mode Field Effect Transistor ( N and P Channel)(N-Channel) (P-Channel)PRODUCT SUMMARY PRODUCT SUMMARYVDSS ID RDS(ON) ( m ) Max VDSS ID RDS(ON) ( m ) Max26 @ VGS = 10V 42 @ VGS = -10V-40V -5A40V 6A33 @ VGS = 4.5V 62 @ VGS = -4.5VD1 D1 D2 D28 7 6 5SO-811 2 3 4S1 G1 S2 G2
stm8455.pdf
S T M8455S amHop Microelectronics C orp. Aug.16,2006 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)(N-C hannel) (PP R ODUC T S UMMAR Y P R ODUC T S UMMAR Y -C hannel)V DS S ID R DS (ON) ( m W ) Max V DS S ID R DS (ON) ( m W ) Max29 @ VG S = 10V 42 @ V G S = -10V-40V -5A40V 6A40 @ V G S = 4.5V 62 @ V G S = -4.5VD1 D1 D2 D28 7 6 5S O-811 2 3 4S
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
