STM8401 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STM8401
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 8.5 nC
   Cossⓘ - Capacitancia de salida: 152 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: SOP8

Búsqueda de reemplazo de MOSFET STM8401

STM8401 Datasheet (PDF)

..1. Size:1032K samhop
stm8401.pdf

S T M8401S amHop Microelectronics C orp.May.26, 2004 ver1.1Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)(N-C hannel) (PP R ODUC T S UMMAR Y P R ODUC T S UMMAR Y -C hannel)V DS S ID R DS (ON) ( m W ) Max V DS S ID R DS (ON) ( m W ) Max25 @ VG S = 10V 55 @ V G S = -10V -30V -4.5A 7A 30V40 @ V G S = 4.5V 85 @ V G S = -4.5VD1 D1 D2 D28 7 6 5S O-81

8.1. Size:230K samhop
stm8405.pdf

S TM8405S amHop Microelectronics C orp.MAY .04,2006 ver 1.5Dual Enhancement Mode Field Effect Transistor ( N and P Channel)(N-C hannel) (PPR ODUC T S UMMAR Y PR ODUC T S UMMAR Y -C hannel)VDS S ID R DS (ON) ( m ) Max VDS S ID R DS (ON) ( m ) Max25 @ VGS =10V 50 @ VGS =-10V-30V -5A30V 7A40 @ VGS =4.5V 70 @ VGS =-4.5VD1 D1 D2 D28 7 6 5SO-811 2 3 4S 1 G 1 S

9.1. Size:255K samhop
stm8456.pdf

STM8456aS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor ( N and P Channel )PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID33 @ VGS=10V 45 @ VGS=-10V40V 6.2A -40V -5.3A45 @ VGS=4.5V 70 @ VGS=-4.5VD2 5 4 G 26 3D2 S 2D1 7 2G 1S O-8D1 8 1S 11(TA=25C unless otherwi

9.2. Size:251K samhop
stm8458.pdf

STM8458aS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor ( N and P Channel )PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID32 @ VGS=10V 48 @ VGS=-10V40V 6.3A -40V -5.1A42 @ VGS=4.5V 68 @ VGS=-4.5VD2 5 4 G 26 3D2 S 2D1 7 2G 1S O-8D1 8 1S 11(TA=25C unless otherwi

9.3. Size:200K samhop
stm8457.pdf

GreenProductSTM8457SamHop Microelectronics Corp.Dec.21,2009 Ver1.1Dual Enhancement Mode Field Effect Transistor ( N and P Channel)(N-Channel) (P-Channel)PRODUCT SUMMARY PRODUCT SUMMARYVDSS ID RDS(ON) ( m ) Max VDSS ID RDS(ON) ( m ) Max26 @ VGS = 10V 42 @ VGS = -10V-40V -5A40V 6A33 @ VGS = 4.5V 62 @ VGS = -4.5VD1 D1 D2 D28 7 6 5SO-811 2 3 4S1 G1 S2 G2

9.4. Size:802K samhop
stm8455.pdf

S T M8455S amHop Microelectronics C orp. Aug.16,2006 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)(N-C hannel) (PP R ODUC T S UMMAR Y P R ODUC T S UMMAR Y -C hannel)V DS S ID R DS (ON) ( m W ) Max V DS S ID R DS (ON) ( m W ) Max29 @ VG S = 10V 42 @ V G S = -10V-40V -5A40V 6A40 @ V G S = 4.5V 62 @ V G S = -4.5VD1 D1 D2 D28 7 6 5S O-811 2 3 4S

Otros transistores... FDMS3600S , FDMS3602S , FDMS3604AS , STM8455 , FDMS3606AS , STM8405 , FDMS3615S , FDMS3662 , SKD502T , FDMS3672 , STM8362 , FDMS4435BZ , FDMS5352 , FDMS5672 , FDMS6673BZ , FDMS6681Z , FDMS7556S .

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