2SK2704 Todos los transistores

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 2sk2701 2sk2702 2sk2704 2sk2707 2sk2709.pdf

2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings IGSS IDSS VTH VDSS VGSS ID ID (pulse) PD Part EAS Conditions Conditions Conditions Number (nA) VGS ( A) VDS (V) VDS ID (mJ) (V) (V) (A) (A) (W) max (V) min max (V) min max (V) ( A) 2SK1179 500 20 8.5 34 85 400 500 20 250 500 2.0 4.0 10 250 2SK1183 200 20 3 12 25 30 500 20 250 200 2.0

 8.1. Size:42K  1
 2sk2703.pdf

2SK2703 External dimensions 2 ...... FM100 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 450 V I = 100 A, V = 0V (BR) DSS D GS V 450 V DSS I 100 nA V = 30V GSS GS V 30 V GSS I 100 A V = 450V, V = 0V DSS DS GS I 10 A D V 2.0 3.0 4.0 V V = 10V, I = 1mA TH DS D I 40

 8.2. Size:43K  1
 2sk2708.pdf

2SK2708 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 600 V I = 100 A, V = 0V (BR) DSS D GS V 600 V DSS I 100 nA V = 30V GSS GS V 30 V GSS I 100 A V = 600V, V = 0V DSS DS GS I 7 A D V 2.0 3.0 4.0 V V = 10V, I = 1mA TH DS D I 28 A

 8.3. Size:43K  1
 2sk2706.pdf

2SK2706 External dimensions 2 ...... FM100 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 450 V I = 100 A, V = 0V (BR) DSS D GS V 450 V DSS I 100 nA V = 30V GSS GS V 30 V GSS I 100 A V = 450V, V = 0V DSS DS GS I 18 A D V 2.0 3.0 4.0 V V = 10V, I = 1mA TH DS D I 72

 8.4. Size:43K  1
 2sk2705.pdf

2SK2705 External dimensions 2 ...... FM100 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 450 V I = 100 A, V = 0V (BR) DSS D GS V 450 V DSS I 100 nA V = 30V GSS GS V 30 V GSS I 100 A V = 450V, V = 0V DSS DS GS I 13 A D V 2.0 3.0 4.0 V V = 10V, I = 1mA TH DS D I 52

 8.5. Size:388K  toshiba
 2sk2700.pdf

2SK2700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( MOSIII) 2SK2700 Chopper Regulator, DC DC Converter and Motor Drive Applications Unit mm Low drain source ON resistance RDS = 3.7 (typ.) (ON) High forward transfer admittance Y = 2.6 S (typ.) fs Low leakage current I = 100 A (max) (V = 720 V) DSS DS Enhancement mode Vth =

 8.6. Size:206K  sanken-ele
 2sk2701a.pdf

2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings IGSS IDSS VTH VDSS VGSS ID ID (pulse) PD Part EAS Conditions Conditions Conditions Number (nA) VGS ( A) VDS (V) VDS ID (mJ) (V) (V) (A) (A) (W) max (V) min max (V) min max (V) ( A) 2SK2420 60 20 30 120 40 38 100 20 100 60 2.0 4.0 10 250 2SK2701A 450 30 7 28 35 130 100 30 100 450 2.0

 8.7. Size:252K  inchange semiconductor
 2sk2701a.pdf

isc N-Channel MOSFET Transistor 2SK2701A FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.1 (Max) 100% avalanche tested DS(on) Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose