ME15N25 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ME15N25
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 17.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 70.8 nC
   trⓘ - Tiempo de subida: 62.6 nS
   Cossⓘ - Capacitancia de salida: 112 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.265 Ohm
   Paquete / Cubierta: TO252

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ME15N25 Datasheet (PDF)

..1. Size:1248K matsuki electric
me15n25 me15n25-g.pdf

ME15N25/ME15N25-G N- Channel 250V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME15N25 is the N-Channel logic enhancement mode power RDS(ON)265m@VGS=10V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to Exceptional on-resi

0.1. Size:1022K matsuki electric
me15n25f me15n25f-g.pdf

ME15N25F/ME15N25F-G N-Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)220m@VGS=10V The ME15N25F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process

9.1. Size:995K matsuki electric
me15n10 me15n10g.pdf

ME15N10/ME15N10-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)100m@VGS=10V The ME15N10 is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process is

9.2. Size:1197K matsuki electric
me15n10 me15n10-g.pdf

9.3. Size:847K cn vbsemi
me15n10.pdf

ME15N10www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (

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