ME2301S-G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ME2301S-G

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 2.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 26 nS

Cossⓘ - Capacitancia de salida: 56 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm

Encapsulados: SOT23

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ME2301S-G datasheet

 ..1. Size:1009K  matsuki electric
 me2301s me2301s-g.pdf pdf_icon

ME2301S-G

ME2301S/ME2301S-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 110m @VGS=-4.5V The ME2301S is the P-Channel logic enhancement mode power field RDS(ON) 150m @VGS=-2.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is espec

 8.1. Size:1077K  matsuki electric
 me2301a me2301a-g.pdf pdf_icon

ME2301S-G

ME2301A/ ME2301A-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2301A is the P-Channel logic enhancement mode power field RDS(ON) 75m @VGS=-4.5V effect transistors are produced using high cell density, DMOS trench RDS(ON) 95m @VGS=-2.5V technology. This high density process is especially tailored to RDS(ON) 130m @VGS=-1.8V minimize on-stat

 8.2. Size:1127K  matsuki electric
 me2301 me2301-g.pdf pdf_icon

ME2301S-G

ME2301/ME2301-G P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES RDS(ON) 110m @VGS=-4.5V The ME2301 is the P-Channel logic enhancement mode power field RDS(ON) 150m @VGS=-2.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is es

 8.3. Size:1999K  matsuki electric
 me2301dc me2301dc-g.pdf pdf_icon

ME2301S-G

ME2301DC/ME2301DC-G P-Channel 20V(D-S) MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES The ME2301DC is the P-Channel logic enhancement mode power RDS(ON) 110m @VGS=-4.5V field effect transistors are produced using high cell density , DMOS RDS(ON) 150m @VGS=-2.5V trench technology. This high density process is especially tailored to Super high density cell design

MOSTRAR MÁS

Otros transistores... ME2301A-G, ME2301DC, ME2301DC-G, ME2301DN, ME2301DN-G, ME2301GC, ME2301GC-G, ME2301S, IRLB4132, ME2302-G, ME2303, ME2303-G, ME2305, ME2305A, ME2305A-G, ME2305-G, ME2306