ME2302-G Todos los transistores

 ..1. Size:1432K  matsuki electric
 me2302 me2302-g.pdf

ME2302/ME2302-G N-Channel 20V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2302 is the N-Channel logic enhancement mode power field RDS(ON) 85m @VGS=4.5V effect transistors, using high cell density, DMOS trench technology. RDS(ON) 115m @VGS=2.5V This high density process is especially tailored to minimize on-state RDS(ON) 130m @VGS=1.8V resistance.T

 8.1. Size:587K  matsuki electric
 me2302.pdf

ME2302(Pb-free) N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The ME2302 is the N-Channel logic enhancement mode power field RDS(ON) 85m @VGS=4.5V effect transistors, using high cell density, DMOS trench technology. RDS(ON) 115m @VGS=2.5V This high density process is especially tailored to minimize on-state RDS(ON) 135m @VGS=1.8V resistance.

 9.1. Size:1599K  matsuki electric
 me2306bs me2306bs-g.pdf

ME2306BS/ME2306BS-G N-Channel 30V (D-S)MOSFET GENERAL DESCRIPTION FEATURES The ME2306BS is the N-Channel logic enhancement mode power RDS(ON) 38m @VGS=10V field effect transistor, using high cell density, DMOS trench RDS(ON) 43m @VGS=4.5V technology. This high density process is especially tailored to RDS(ON) 62m @VGS=2.5V minimize on-state resistance. These

 9.2. Size:1136K  matsuki electric
 me2305 me2305-g.pdf

ME2305/ME2305-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2305 is the P-Channel logic enhancement mode power RDS(ON) 62m @VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON) 72m @VGS=-4.5V trench technology. This high density process is especially tailored RDS(ON) 91m @VGS=-2.5V to minimize on-state resista

 9.3. Size:879K  matsuki electric
 me2306n me2306n-g.pdf

ME2306N/ME2306N-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2306N is the N-Channel logic enhancement mode power RDS(ON) 37m @VGS=10V field effect transistors, using high cell density, DMOS trench RDS(ON) 49m @VGS=4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON) mi

 9.4. Size:1077K  matsuki electric
 me2301a me2301a-g.pdf

ME2301A/ ME2301A-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2301A is the P-Channel logic enhancement mode power field RDS(ON) 75m @VGS=-4.5V effect transistors are produced using high cell density, DMOS trench RDS(ON) 95m @VGS=-2.5V technology. This high density process is especially tailored to RDS(ON) 130m @VGS=-1.8V minimize on-stat

 9.5. Size:1127K  matsuki electric
 me2301 me2301-g.pdf

ME2301/ME2301-G P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES RDS(ON) 110m @VGS=-4.5V The ME2301 is the P-Channel logic enhancement mode power field RDS(ON) 150m @VGS=-2.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is es

 9.6. Size:976K  matsuki electric
 me2303 me2303-g.pdf

ME2303/ME2303-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2303 is the P-Channel logic enhancement mode power field RDS(ON) 75m @VGS=-10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 100m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(

 9.7. Size:1294K  matsuki electric
 me2306s me2306s-g.pdf

ME2306S/ME2306S-G N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION FEATURES FEATURES RDS(ON) 37m @ VGS =10V The ME2306S is the N-Channel logic enhancement mode power RDS(ON) 49m @VGS=4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailor

 9.8. Size:730K  matsuki electric
 me2306an me2306an-g.pdf

Preliminary-ME2306AN/ME2306AN-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2306AN is the N-Channel logic enhancement mode power RDS(ON) 37m @VGS=10V field effect transistors, using high cell density, DMOS trench RDS(ON) 40m @VGS=4.5V technology. This high density process is especially tailored to RDS(ON) 53m @VGS=2.5V minimize on-state r

 9.9. Size:1115K  matsuki electric
 me2306ds me2306ds-g.pdf

ME2306DS/ME2306DS-G N-Channel 30V (D-S) MOSFET , ESD Protected GENERAL DESCRIPTION FEATURES The ME2306DS is the N-Channel logic enhancement mode power RDS(ON) 31m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 52m @VGS=4.5V trench technology. This high density process is especially tailored to ESD Protected minimize on-state

 9.10. Size:1999K  matsuki electric
 me2301dc me2301dc-g.pdf

ME2301DC/ME2301DC-G P-Channel 20V(D-S) MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES The ME2301DC is the P-Channel logic enhancement mode power RDS(ON) 110m @VGS=-4.5V field effect transistors are produced using high cell density , DMOS RDS(ON) 150m @VGS=-2.5V trench technology. This high density process is especially tailored to Super high density cell design

 9.11. Size:1540K  matsuki electric
 me2308s me2308s-g.pdf

ME2308S/ME2308S-G N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2308S is the N-Channel logic enhancement mode power RDS(ON) 100m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 130m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS

 9.12. Size:1321K  matsuki electric
 me2301gc me2301gc-g.pdf

ME2301GC/ ME2301GC-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 75m @VGS=-4.5V The ME2301GC is the P-Channel logic enhancement mode power RDS(ON) 95m @VGS=-2.5V field effect transistors are produced using high cell density, DMOS RDS(ON) 130m @VGS=-1.8V trench technology. This high density process is especially tailored to Sup

 9.13. Size:1298K  matsuki electric
 me2301dn me2301dn-g.pdf

ME2301DN/ME2301DN-G P-Channel 20V(D-S) MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES The ME2301DN is the P-Channel logic enhancement mode power RDS(ON) 90m @VGS=-4.5V field effect transistors are produced using high cell density , DMOS RDS(ON) 130m @VGS=-2.5V trench technology. This high density process is especially tailored to Super high density cell desig

 9.14. Size:1039K  matsuki electric
 me2306as me2306as-g.pdf

ME2306AS/ME2306AS-G N-Channel 30V (D-S)MOSFET GENERAL DESCRIPTION FEATURES The ME2306AS is the N-Channel logic enhancement mode power RDS(ON) 34.5m @VGS=10V field effect transistors, using high cell density, DMOS trench RDS(ON) 38m @VGS=4.5V technology.This high density process is especially tailored to RDS(ON) 50m @VGS=2.5V minimize on-state resistance.These

 9.15. Size:1718K  matsuki electric
 me2307 me2307-g.pdf

ME2307/ME2307-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2307 is the P-Channel logic enhancement mode power field RDS(ON) 70m @VGS=-10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 95m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(O

 9.16. Size:1070K  matsuki electric
 me2309 me2309-g.pdf

ME2309/ ME2309-G P-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2309 is the P-Channel logic enhancement mode power field RDS(ON) 215m @VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 260m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(O

 9.17. Size:1057K  matsuki electric
 me2305a me2305a-g.pdf

ME2305A/ME2305A-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2305A is the P-Channel logic enhancement mode power RDS(ON) 67m @VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON) 77m @VGS=-4.5V trench technology. This high density process is especially tailored RDS(ON) 96m @VGS=-2.5V to minimize on-state resistan

 9.18. Size:1457K  matsuki electric
 me2306d me2306d-g.pdf

ME2306D/ME2306D-G N-Channel 30V (D-S) MOSFET , ESD Protected GENERAL DESCRIPTION FEATURES The ME2306D is the N-Channel logic enhancement mode power RDS(ON) 31m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 52m @VGS=4.5V trench technology. This high density process is especially tailored to ESD Protected minimize on-state res

 9.19. Size:1009K  matsuki electric
 me2301s me2301s-g.pdf

ME2301S/ME2301S-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 110m @VGS=-4.5V The ME2301S is the P-Channel logic enhancement mode power field RDS(ON) 150m @VGS=-2.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is espec

 9.20. Size:1045K  matsuki electric
 me2306 me2306-g.pdf

ME2306/ME2306-G N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 37m @VGS=10V The ME2306 is the N-Channel logic enhancement mode power field RDS(ON) 49m @VGS=4.5V effect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to

 9.21. Size:921K  matsuki electric
 me2308d me2308d-g.pdf

ME2308D/ME2308D-G N-Channel 30V (D-S) MOSFET ,ESD Protection GENERAL DESCRIPTION FEATURES The ME2308D is the N-Channel logic enhancement mode power RDS(ON) 60m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 70m @VGS=4.5V trench technology. This high density process is especially tailored to RDS(ON) 100m @VGS=2.5V minimize

 9.22. Size:830K  matsuki electric
 me2308dn-g.pdf

ME2308DN-G N-Channel 20V (D-S) MOSFET ,ESD Protection GENERAL DESCRIPTION FEATURES The ME2308DN-G is the N-Channel logic enhancement mode power RDS(ON) 0.35 @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON) 0.45 @VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON) 0.65 @VGS=1.8V mini

 9.23. Size:1203K  matsuki electric
 me2306a me2306a-g.pdf

ME2306A/ME2306A-G N-Channel 30V (D-S)MOSFET GENERAL DESCRIPTION FEATURES The ME2306A is the N-Channel logic enhancement mode power field RDS(ON) 34.5m @VGS=10V effect transistors, using high cell density, DMOS trench technology. RDS(ON) 38m @VGS=4.5V This high density process is especially tailored to minimize on-state RDS(ON) 50m @VGS=2.5V resistance. Su

 9.24. Size:850K  cn vbsemi
 me2308s.pdf

ME2308S www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G