ME2305A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: ME2305A
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 20 nC
   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 65 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.067 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET ME2305A

ME2305A Datasheet (PDF)

..1. Size:1057K matsuki electric
me2305a me2305a-g.pdf

ME2305A/ME2305A-G P-Channel 20V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME2305A is the P-Channel logic enhancement mode power RDS(ON)67m@VGS=-10Vfield effect transistors are produced using high cell density, DMOS RDS(ON)77m@VGS=-4.5Vtrench technology. This high density process is especially tailored RDS(ON)96m@VGS=-2.5Vto minimize on-state resistan

8.1. Size:1136K matsuki electric
me2305 me2305-g.pdf

ME2305/ME2305-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2305 is the P-Channel logic enhancement mode power RDS(ON)62m@VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON)72m@VGS=-4.5V trench technology. This high density process is especially tailored RDS(ON)91m@VGS=-2.5V to minimize on-state resista

9.1. Size:1599K matsuki electric
me2306bs me2306bs-g.pdf

ME2306BS/ME2306BS-G N-Channel 30V (D-S)MOSFET GENERAL DESCRIPTION FEATURES The ME2306BS is the N-Channel logic enhancement mode power RDS(ON)38m@VGS=10V field effect transistor, using high cell density, DMOS trench RDS(ON)43m@VGS=4.5V technology. This high density process is especially tailored to RDS(ON)62m@VGS=2.5V minimize on-state resistance. These

9.2. Size:879K matsuki electric
me2306n me2306n-g.pdf

ME2306N/ME2306N-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME2306N is the N-Channel logic enhancement mode power RDS(ON)37m@VGS=10Vfield effect transistors, using high cell density, DMOS trench RDS(ON)49m@VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)mi

9.3. Size:1077K matsuki electric
me2301a me2301a-g.pdf

ME2301A/ ME2301A-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2301A is the P-Channel logic enhancement mode power field RDS(ON) 75m@VGS=-4.5V effect transistors are produced using high cell density, DMOS trench RDS(ON) 95m@VGS=-2.5V technology. This high density process is especially tailored to RDS(ON) 130m@VGS=-1.8V minimize on-stat

9.4. Size:1127K matsuki electric
me2301 me2301-g.pdf

ME2301/ME2301-G P-Channel Enhancement Mode MosfetGENERAL DESCRIPTION FEATURES RDS(ON) 110m@VGS=-4.5V The ME2301 is the P-Channel logic enhancement mode power field RDS(ON) 150m@VGS=-2.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is es

9.5. Size:976K matsuki electric
me2303 me2303-g.pdf

ME2303/ME2303-G P-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME2303 is the P-Channel logic enhancement mode power field RDS(ON) 75m@VGS=-10Veffect transistors are produced using high cell density , DMOS trench RDS(ON) 100m@VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS(

9.6. Size:1294K matsuki electric
me2306s me2306s-g.pdf

ME2306S/ME2306S-G N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION FEATURES FEATURES RDS(ON)37m@ VGS =10V The ME2306S is the N-Channel logic enhancement mode power RDS(ON)49m@VGS=4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailor

9.7. Size:587K matsuki electric
me2302.pdf

ME2302(Pb-free) N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The ME2302 is the N-Channel logic enhancement mode power field RDS(ON)85m@VGS=4.5V effect transistors, using high cell density, DMOS trench technology. RDS(ON)115m@VGS=2.5V This high density process is especially tailored to minimize on-state RDS(ON)135m@VGS=1.8V resistance.

9.8. Size:730K matsuki electric
me2306an me2306an-g.pdf

Preliminary-ME2306AN/ME2306AN-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTIONFEATURES The ME2306AN is the N-Channel logic enhancement mode power RDS(ON)37m@VGS=10Vfield effect transistors, using high cell density, DMOS trench RDS(ON)40m@VGS=4.5Vtechnology. This high density process is especially tailored to RDS(ON)53m@VGS=2.5Vminimize on-state r

9.9. Size:1115K matsuki electric
me2306ds me2306ds-g.pdf

ME2306DS/ME2306DS-G N-Channel 30V (D-S) MOSFET , ESD ProtectedGENERAL DESCRIPTION FEATURES The ME2306DS is the N-Channel logic enhancement mode power RDS(ON)31m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)52m@VGS=4.5V trench technology. This high density process is especially tailored to ESD Protected minimize on-state

9.10. Size:1999K matsuki electric
me2301dc me2301dc-g.pdf

ME2301DC/ME2301DC-G P-Channel 20V(D-S) MOSFET, ESD ProtectedGENERAL DESCRIPTION FEATURES The ME2301DC is the P-Channel logic enhancement mode power RDS(ON) 110m@VGS=-4.5Vfield effect transistors are produced using high cell density , DMOS RDS(ON) 150m@VGS=-2.5Vtrench technology. This high density process is especially tailored to Super high density cell design

9.11. Size:1540K matsuki electric
me2308s me2308s-g.pdf

ME2308S/ME2308S-G N-Channel 60V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME2308S is the N-Channel logic enhancement mode power RDS(ON) 100m@VGS=10Vfield effect transistors are produced using high cell density, DMOS RDS(ON) 130m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS

9.12. Size:1321K matsuki electric
me2301gc me2301gc-g.pdf

ME2301GC/ ME2301GC-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 75m@VGS=-4.5V The ME2301GC is the P-Channel logic enhancement mode power RDS(ON) 95m@VGS=-2.5V field effect transistors are produced using high cell density, DMOS RDS(ON) 130m@VGS=-1.8V trench technology. This high density process is especially tailored to Sup

9.13. Size:1298K matsuki electric
me2301dn me2301dn-g.pdf

ME2301DN/ME2301DN-G P-Channel 20V(D-S) MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES The ME2301DN is the P-Channel logic enhancement mode power RDS(ON) 90m@VGS=-4.5V field effect transistors are produced using high cell density , DMOS RDS(ON) 130m@VGS=-2.5V trench technology. This high density process is especially tailored to Super high density cell desig

9.14. Size:1039K matsuki electric
me2306as me2306as-g.pdf

ME2306AS/ME2306AS-G N-Channel 30V (D-S)MOSFET GENERAL DESCRIPTION FEATURES The ME2306AS is the N-Channel logic enhancement mode power RDS(ON)34.5m@VGS=10V field effect transistors, using high cell density, DMOS trench RDS(ON)38m@VGS=4.5V technology.This high density process is especially tailored to RDS(ON)50m@VGS=2.5V minimize on-state resistance.These

9.15. Size:1718K matsuki electric
me2307 me2307-g.pdf

ME2307/ME2307-G P-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME2307 is the P-Channel logic enhancement mode power field RDS(ON) 70m@VGS=-10Veffect transistors are produced using high cell density , DMOS trench RDS(ON) 95m@VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS(O

9.16. Size:1070K matsuki electric
me2309 me2309-g.pdf

ME2309/ ME2309-G P-Channel 60V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME2309 is the P-Channel logic enhancement mode power field RDS(ON)215m@VGS=-10Veffect transistors are produced using high cell density, DMOS trench RDS(ON)260m@VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS(O

9.17. Size:1457K matsuki electric
me2306d me2306d-g.pdf

ME2306D/ME2306D-G N-Channel 30V (D-S) MOSFET , ESD ProtectedGENERAL DESCRIPTION FEATURES The ME2306D is the N-Channel logic enhancement mode power RDS(ON)31m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)52m@VGS=4.5V trench technology. This high density process is especially tailored to ESD Protected minimize on-state res

9.18. Size:1432K matsuki electric
me2302 me2302-g.pdf

ME2302/ME2302-G N-Channel 20V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2302 is the N-Channel logic enhancement mode power field RDS(ON)85m@VGS=4.5V effect transistors, using high cell density, DMOS trench technology. RDS(ON)115m@VGS=2.5V This high density process is especially tailored to minimize on-state RDS(ON)130m@VGS=1.8V resistance.T

9.19. Size:1009K matsuki electric
me2301s me2301s-g.pdf

ME2301S/ME2301S-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 110m@VGS=-4.5V The ME2301S is the P-Channel logic enhancement mode power field RDS(ON) 150m@VGS=-2.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is espec

9.20. Size:1045K matsuki electric
me2306 me2306-g.pdf

ME2306/ME2306-G N-Channel Enhancement Mode MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)37m@VGS=10V The ME2306 is the N-Channel logic enhancement mode power field RDS(ON)49m@VGS=4.5V effect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to

9.21. Size:921K matsuki electric
me2308d me2308d-g.pdf

ME2308D/ME2308D-G N-Channel 30V (D-S) MOSFET ,ESD Protection GENERAL DESCRIPTION FEATURES The ME2308D is the N-Channel logic enhancement mode power RDS(ON)60m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON)70m@VGS=4.5V trench technology. This high density process is especially tailored to RDS(ON)100m@VGS=2.5V minimize

9.22. Size:830K matsuki electric
me2308dn-g.pdf

ME2308DN-G N-Channel 20V (D-S) MOSFET ,ESD ProtectionGENERAL DESCRIPTION FEATURES The ME2308DN-G is the N-Channel logic enhancement mode power RDS(ON) 0.35 @VGS=4.5Vfield effect transistors are produced using high cell density, DMOS RDS(ON) 0.45 @VGS=2.5Vtrench technology. This high density process is especially tailored to RDS(ON) 0.65 @VGS=1.8Vmini

9.23. Size:1203K matsuki electric
me2306a me2306a-g.pdf

ME2306A/ME2306A-G N-Channel 30V (D-S)MOSFET GENERAL DESCRIPTION FEATURES The ME2306A is the N-Channel logic enhancement mode power field RDS(ON)34.5m@VGS=10V effect transistors, using high cell density, DMOS trench technology. RDS(ON)38m@VGS=4.5V This high density process is especially tailored to minimize on-state RDS(ON)50m@VGS=2.5V resistance. Su

9.24. Size:850K cn vbsemi
me2308s.pdf

ME2308Swww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G

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